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1N4126-1

Description
Zener Diode, 51V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35,
CategoryDiscrete semiconductor    diode   
File Size95KB,2 Pages
ManufacturerCompensated Devices Inc.
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1N4126-1 Overview

Zener Diode, 51V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35,

1N4126-1 Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
Reach Compliance Codeunknown
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage51 V
Maximum reverse current0.01 µA
surface mountNO
technologyZENER
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance5%
Working test current0.25 mA
• 1N4099-1 THRU 1N4135-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/435
• LOW CURRENT OPERATION AT 250
µ
A
• LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS
• METALLURGICALLY BONDED
1N4099 thru 1N4135
and
1N4099-1 thru 1N4135-1
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage at 200 mA: 1.1 Volts maximum
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
JEDEC
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE
VZ @ lZT
(Note 1)
VOLTS
1N4099
1N4100
1N4101
1N4102
1N4103
1N4104
1N4105
1N4106
1N4107
1N4108
1N4109
1N4110
1N4111
1N4112
1N4113
1N4114
1N4115
1N4116
1N4117
1N4118
1N4119
1N4120
1N4121
1N4122
1N4123
1N4124
1N4125
1N4126
1N4127
1N4128
1N4129
1N4130
1N4131
1N4132
1N4133
1N4134
1N4135
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
82
87
91
100
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT
(Note 2)
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
150
150
150
150
150
150
200
200
200
200
200
250
250
300
300
400
500
700
700
800
1000
1200
1500
MAXIMUM REVERSE
LEAKAGE
CURRENT
lR @ VR
MAXIMUM
NOISE
DENSITY
ND @ lZT
MAXIMUM
ZENER
CURRENT
lZM
mA
56
51
46
44
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
14
13
12
11
9.8
8.9
8.1
7.5
6.7
6.4
6.1
5.6
5.1
4.6
4.4
4.2
3.8
µ
A
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
µ
A
10
10
1.0
1.0
1.0
1.0
.05
.05
.05
.05
.05
.05
.05
.05
.05
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
VOLTS
5.17
5.70
6.24
6.61
6.92
7.60
8.44
9.12
9.87
10.65
11.40
12.15
12.92
13.67
14.44
15.20
16.72
18.25
19.00
20.46
21.28
22.80
25.08
27.38
29.65
32.65
35.75
38.76
42.60
45.60
47.10
51.68
57.00
62.32
66.12
69.16
76.00
µ
V/
Hz
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
250 ˚C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (Z
OJX): 35
˚C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
ANY.
NOTE 1
The JEDEC type numbers shown above have a Zener voltage tolerance of + 5% of
the nominal Zener voltage. Vz is measured with the device junction in thermal
equilibrium at an ambient temperature of 25°C + 3°C. A “C” suffix denotes a + 2%
tolerance and a “D” suffix denotes a + 1% tolerance.
Zener impedance is derived by superimposing on lZT, A 60 Hz rms a.c. current
equal to 10% of lZT (25
µ
A a.c.).
NOTE 2
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
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