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MR16R0824BN1-CK7

Description
RAMBUS MODULE
Categorystorage    storage   
File Size25KB,4 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

MR16R0824BN1-CK7 Overview

RAMBUS MODULE

MR16R0824BN1-CK7 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeDMA
package instructionDIMM, DIMM184,40
Contacts184
Reach Compliance Codecompli
ECCN codeEAR99
access modeBLOCK ORIENTED PROTOCOL
Maximum access time45 ns
Other featuresSELF CONTAINED REFRESH
Maximum clock frequency (fCLK)711 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
memory density536870912 bi
Memory IC TypeRAMBUS DRAM MODULE
memory width16
Number of functions1
Number of ports1
Number of terminals184
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
organize32MX16
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184,40
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply1.8/2.5,2.5 V
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)2.63 V
Minimum supply voltage (Vsup)2.37 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Terminal formNO LEAD
Terminal pitch1 mm
Terminal locationDUAL
SERIAL PRESENCE DETECT
MR16R0824(6/8/C/G)BN1
RAMBUS MODULE
RIMM SPD Specification
based on 128M RDRAM
(B-die, 32s banks)
Version 1.1
October 2000
Change History
Version 1.1 (Oct.
′00)
Based on the Samsung 128M RDRAM (A-die) SPD Specification 1.02 version.
-1-
Version 1.1 Oct. 2000
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