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GBJ606

Description
2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size468KB,2 Pages
ManufacturerSUNTAN
Websitehttp://www.suntan.com.hk/
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GBJ606 Overview

2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

Suntan Su
®
®
GBJ6005 THRU GBJ610
Single Phase 6.0 AMPS. Glass Passivated Bridge Rectifiers
Voltage Range 50 to 1000 Volts
Current 6.0 Amperes
6KBJ
FEATU R E S
◆Ideal
for printed circuit board
◆Reliable
low cost construction technique
results in inexpensive product
◆High
temperature soldering guaranteed:
260℃
/ 10 seconds / 0.375” ( 9.5mm )
lead length at 5 lbs., ( 2.3 kg ) tension
◆UL
Recognized File number: E347215
MECHANICAL DATA
◆Case:
Molded plastic
◆Lead:
solder plated
◆Polarity:
As marked
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current See Fig.2
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage @ 6.0A
Maximum DC Reverse Current @ T
A
=25℃
I
R
rated DC blocking voltage per leg T
A
= 125℃
R
θJA
Typical Thermal Resistance (Note)
R
θJL
Operating Temperature Range
Storage Temperature Range
T
J
T
STG
V
F
V
RRM
V
RMS
V
DC
I
(AV)
GBJ
6005
GBJ
601
GBJ
602
GBJ
604
GBJ
606
GBJ
608
GBJ
610
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
A
6.0
1500
1.0
5.0
500
1.8
-55 to +150
-55 to +150
I
FSM
A
V
μA
℃/W
NOTE
Thermal Resistance from Junction to Case with Device Mounted on 75×75×1.6mm Cu Plate Heatsink
1

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