DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
PBSS4330X
30 V, 3 A
NPN low V
CEsat
(BISS) transistor
Product data sheet
Supersedes data of 2003 Nov 28
2004 Dec 06
NXP Semiconductors
Product data sheet
30 V, 3 A
NPN low V
CEsat
(BISS) transistor
FEATURES
•
SOT89 (SC-62) package
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability: I
C
and I
CM
•
Higher efficiency leading to less heat generation
•
Reduced printed-circuit board requirements.
APPLICATIONS
•
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
•
Peripheral drivers
– Driver in low supply voltage applications
(e.g. lamps and LEDs)
– Inductive load driver (e.g. relays, buzzers
and motors).
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
emitter
collector
base
PARAMETER
PBSS4330X
MAX. UNIT
30
3
5
100
V
A
A
mΩ
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
DESCRIPTION
2
3
DESCRIPTION
NPN low V
CEsat
transistor in a SOT89 plastic package.
MARKING
TYPE NUMBER
PBSS4330X
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PBSS4330X
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
MARKING CODE
(1)
*1R
1
3
2
1
sym042
Fig.1 Simplified outline (SOT89) and symbol.
VERSION
SOT89
2004 Dec 06
2
NXP Semiconductors
Product data sheet
30 V, 3 A
NPN low V
CEsat
(BISS) transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
T
amb
≤
25
°C
note 1
note 2
note 3
note 4
T
stg
T
j
T
amb
Notes
storage temperature
junction temperature
ambient temperature
−
−
−
−
−65
−
−65
CONDITIONS
open emitter
open base
open collector
note 4
limited by T
j(max)
−
−
−
−
−
−
MIN.
PBSS4330X
MAX.
50
30
6
3
5
0.5
550
1
1.4
1.6
+150
150
+150
V
V
V
A
A
A
UNIT
mW
W
W
W
°C
°C
°C
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
2
.
4. Device mounted on a ceramic printed-circuit board 7 cm
2
, single-sided copper, tin-plated.
2004 Dec 06
3
NXP Semiconductors
Product data sheet
30 V, 3 A
NPN low V
CEsat
(BISS) transistor
PBSS4330X
handbook, halfpage
2
MLE372
Ptot
(W)
1.6
(1)
(2)
1.2
(3)
0.8
(4)
0.4
0
0
40
80
120
160
Tamb (°C)
(1) Ceramic PCB; 7 cm
2
mounting pad for collector.
(2) FR4 PCB; 6 cm
2
copper mounting pad for collector.
(3) FR4 PCB; 1 cm
2
copper mounting pad for collector.
(4) Standard footprint.
Fig.2 Power derating curves.
2004 Dec 06
4
NXP Semiconductors
Product data sheet
30 V, 3 A
NPN low V
CEsat
(BISS) transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 2
note 3
note 4
R
th(j-s)
Notes
thermal resistance from junction to soldering point
225
125
90
80
16
VALUE
PBSS4330X
UNIT
K/W
K/W
K/W
K/W
K/W
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm
2
.
3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm
2
.
4. Device mounted on a ceramic printed-circuit board 7 cm
2
, single-sided copper, tin-plated.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1.00
0.75
0.50
0.33
0.20
0.10
0.05
0.02
0.01
1
0
006aaa243
10
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Mounted on FR4 printed-circuit board; standard footprint.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Dec 06
5
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