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12F80PBF

Description
Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
CategoryDiscrete semiconductor    diode   
File Size159KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

12F80PBF Overview

Rectifier Diode, 1 Phase, 1 Element, 12A, 800V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

12F80PBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeDO-4
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.26 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current280 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
GuidelineCECC50009-037
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperature40
Bulletin I20205 rev. B 01/05
12F(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
Types up to 1200V V
RRM
12 A
Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls
Major Ratings and Characteristics
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
range
12F(R)
12
144
19
265
280
351
320
100 to 1200
- 65 to 175
Units
A
°C
A
A
A
A
2
s
A
2
s
V
°C
case style
DO-203AA (DO-4)
www.irf.com
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