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PBSS4440D_15

Description
40 V NPN low VCEsat (BISS) transistor
File Size167KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PBSS4440D_15 Overview

40 V NPN low VCEsat (BISS) transistor

PBSS4440D
40 V NPN low V
CEsat
(BISS) transistor
Rev. 02 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
SMD plastic package.
PNP complement: PBSS5440D.
1.2 Features
Ultra low collector-emitter saturation voltage V
CEsat
4 A continuous collector current capability I
C
(DC)
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
1.3 Applications
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
[2]
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
t = 1 ms or limited by
T
j(max)
I
C
= 6 A; I
B
= 600 mA
[2]
Conditions
open base
[1]
Min
-
-
-
-
Typ
-
-
-
55
Max
40
4
15
75
Unit
V
A
A
Device mounted on a ceramic Printed-Circuit Board (PCB), AL
2
O
3
, standard footprint.
Pulse test: t
p
300
μs; δ ≤
0.02.
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