Polar3
TM
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA10N60P
IXFP10N60P
V
DSS
I
D25
R
DS(on)
= 600V
= 10A
740m
TO-263 (IXFA)
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150C
T
C
= 25C
Maximum Ratings
600
600
30
40
10
25
10
500
10
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
Nm/lb.in
g
g
Features
S
D (Tab)
TO-220 (IXFP)
G
D
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10
2.5
3.0
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
600
3.0
5.5
V
V
High Power Density
Easy to Mount
Space Savings
Applications
100
nA
25
A
500
μA
740 m
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
© 2018 IXYS CORPORATION, All Rights Reserved
DS99424G(6/18)
IXFA10N60P
IXFP10N60P
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
0.50
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 10 (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max
6
11
1720
160
14
23
27
65
21
32
12
10
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.62
C/W
C/W
1. Gate
2. Drain
3. Source
4. Drain
TO-263 Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 5A, -di/dt = 200A/μs
V
R
= 100V
120
320
3
Characteristic Values
Min.
Typ.
Max
10
30
1.5
A
A
V
D
D1
E1
EJECTOR
TO-220 Outline
E
oP
A
A1
H1
D2
Q
200
ns
nC
A
A2
L1
L
e
c
e1
3X b
3X b2
Note 1. Pulse test, t
300s, duty cycle, d 2%.
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXFA10N60P
IXFP10N60P
Fig. 1. Output Characteristics @ T
J
= 25 C
10
9
8
7
6V
V
GS
= 10V
7V
24
V
GS
= 10V
20
7V
16
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
o
I
D
- Amperes
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
5V
I
D
- Amperes
12
6V
8
4
5V
0
0
5
10
15
20
25
30
V
DS
- Volts
V
DS
- Volts
o
Fig. 3. Output Characteristics @ T
J
= 125 C
10
9
8
7
V
GS
= 10V
2.6
2.4
2.2
Fig. 4. R
DS(on)
Normalized to I
D
= 5A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
6V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
D
= 10A
I
D
= 5A
I
D
- Amperes
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
5V
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
3.0
Fig. 5. R
DS(on)
Normalized to I
D
= 5A Value vs.
Drain Current
V
GS
= 10V
Fig. 6. Maximum Drain Current vs. Case Temperature
12
2.6
T
J
= 125 C
o
10
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25 C
o
2.2
8
1.8
6
1.4
4
1.0
2
0.6
0
5
10
15
20
25
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA10N60P
IXFP10N60P
Fig. 7. Input Admittance
16
14
12
22
20
18
16
25 C
125 C
o
o
Fig. 8. Transconductance
T
J
= - 40 C
o
g
f s
- Siemens
I
D
- Amperes
10
8
6
4
2
0
3.2
3.6
4.0
4.4
T
J
= 125 C
25 C
o
- 40 C
o
o
14
12
10
8
6
4
2
0
4.8
5.2
5.6
6.0
6.4
0
2
4
6
8
10
12
14
16
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
30
10
9
25
8
7
V
DS
= 300V
I
D
= 5A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
20
V
GS
- Volts
T
J
= 125 C
o
6
5
4
3
2
1
15
10
T
J
= 25 C
o
5
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
0
5
10
15
20
25
30
35
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
Fig. 12. Maximum Transient Thermal Impedance
1
f
= 1 MHz
Capacitance - PicoFarads
1,000
Ciss
Z
(th)JC
- K / W
35
40
100
Coss
0.1
10
Crss
1
0
5
10
15
20
25
30
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_10N60P (4J) 4-18-10-D
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
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