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S-LMBT4401LT1G

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size384KB,6 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

S-LMBT4401LT1G Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3

S-LMBT4401LT1G Parametric

Parameter NameAttribute value
MakerLRC
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)255 ns
Maximum opening time (tons)35 ns
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
ORDERING INFORMATION
Device
LMBT4401LT1G
S-LMBT4401LT1G
LMBT4401LT3G
S-LMBT4401LT3G
Marking
2X
2X
Shipping
3000/Tape & Reel
10000/Tape & Reel
1
2
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT4401LT1G
S-LMBT4401LT1G
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
40
60
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
SOT–23
3
COLLECTOR
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
2
EMITTER
R
θJA
P
D
R
θJA
T
J
, T
stg
DEVICE MARKING
LMBT4401LT1G = 2X
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
Base Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
Collector Cutoff Current
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs;
Duty Cycle <2.0%.
V
(BR)CEO
40
V
(BR)CBO
60
V
(BR)EBO
Vdc
Vdc
Vdc
6.0
µAdc
0.1
µAdc
0.1
I
BEV
I
CEX
Rev.O 1/6

S-LMBT4401LT1G Related Products

S-LMBT4401LT1G LMBT4401LT3G S-LMBT4401LT3G
Description Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
Maker LRC LRC LRC
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.6 A 0.6 A 0.6 A
Collector-emitter maximum voltage 40 V 40 V 40 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz
Maximum off time (toff) 255 ns 255 ns 255 ns
Maximum opening time (tons) 35 ns 35 ns 35 ns
Guideline AEC-Q101 - AEC-Q101
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