MCP6401/1R/1U/2/4/6/7/9
1 MHz, 45 µA Op Amps
Features
Low Quiescent Current: 45 µA (typical)
Gain Bandwidth Product: 1 MHz (typical)
Rail-to-Rail Input and Output
Supply Voltage Range: 1.8V to 6.0V
Unity Gain Stable
Extended Temperature Ranges:
- -40°C to +125°C (E temp)
- -40°C to +150°C (H temp)
• No Phase Reversal
•
•
•
•
•
•
Description
The
Microchip
Technology
Inc.
MCP6401/1R/1U/2/4/6/7/9 family of operational
amplifiers (op amps) has low quiescent current
(45 µA, typical) and rail-to-rail input and output
operation. This family is unity gain stable and has a
gain bandwidth product of 1 MHz (typical). These
devices operate with a power supply voltage of 1.8V to
6.0V. These features make the family of op amps well
suited for single-supply, battery-powered applications.
The MCP6401/1R/1U/2/4/6/7/9 family is designed with
Microchip’s advanced CMOS process and offered in
single, dual and quad packages. The devices are
available in two extended temperature ranges (E temp
and H temp) with different package types, which
makes them well-suited for automotive and industrial
applications.
Applications
•
•
•
•
•
•
•
Portable Equipment
Battery Powered System
Medical Instrumentation
Automotive Electronics
Data Acquisition Equipment
Sensor Conditioning
Analog Active Filters
Design Aids
•
•
•
•
•
SPICE Macro Models
FilterLab
®
Software
Microchip Advanced Part Selector (MAPS)
Analog Demonstration and Evaluation Boards
Application Notes
Typical Application
R
2
D
2
V
IN
R
1
V
OUT
MCP6401
D
1
Precision Half-Wave Rectifier
©
2009-2011 Microchip Technology Inc.
DS22229D-page 1
MCP6401/1R/1U/2/4/6/7/9
E Temp Package Types
MCP6401
SC70-5, SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
4 V
IN
–
5 V
DD
H Temp Package Types
MCP6401R
SOT-23-5
MCP6401
SOT-23-5
V
OUT
1
V
SS
2
V
IN
+ 3
5 V
DD
V
OUTA
1
V
INA
– 2
4 V
IN
– V + 3
INA
V
SS
4
MCP6402
SOIC
8 V
DD
7 V
OUTB
6 V
INB
–
5 V
INB
+
V
OUT
1
V
DD
2
V
IN
+ 3
5 V
SS
4 V
IN
–
MCP6402
SOIC
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
MCP6401U
SOT-23-5
8 V
DD
V
IN
+ 1
7 V
OUTB
V
SS
2
6 V
INB
–
5 V
INB
+
V
IN
– 3
5 V
DD
4 V
OUT
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
DD
4
MCP6404
SOIC
MCP6406
SOT-23-5
5 V
DD
4 V
IN
–
14 V
OUTD
V
OUT
1
V
SS
2
13 V –
IND
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
V
IN
+ 3
MCP6402
2x3 TDFN
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
EP
9
8 V
DD
V
OUTA
V
7 V
OUTB INA
–
V +
6 V
INB
–
INA
5 V + V
DD
INB
MCP6404
SOIC, TSSOP
1
2
3
4
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
V
INB
+ 5
V
INB
– 6
V
OUTB
7
MCP6407
SOIC
V
OUTA
1
V
INA
– 2
V
INA
+ 3
V
SS
4
8 V
DD
V
OUTA
1
V
INA
– 2
7 V
OUTB
MCP6409
SOIC
14 V
OUTD
13 V
IND
–
12 V
IND
+
11 V
SS
10 V
INC
+
9 V
INC
–
8 V
OUTC
V
INB
+ 5
V
INB
– 6
V
OUTB
7
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
E temp: -40°C to +125°C
6 V
INB
– V
INA
+ 3
5 V
INB
+ V
DD
4
V
INB
+ 5
V
INB
– 6
V
OUTB
7
H temp: -40°C to +150°C
DS22229D-page 2
©
2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
........................................................................7.0V
Current at Input Pins .....................................................±2 mA
Analog Inputs (V
IN
+
, V
IN
-
)†† .......... V
SS
– 1.0V to V
DD
+ 1.0V
All Other Inputs and Outputs ......... V
SS
– 0.3V to V
DD
+ 0.3V
Difference Input Voltage ...................................... |V
DD
– V
SS
|
Output Short-Circuit Current ................................ Continuous
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature (T
J
) .......................... +155°C
ESD Protection on All Pins (HBM; MM; CDM)....≥ 4 kV; 300V,
1500V
† Notice:
Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational listings of this
specification is not implied. Exposure to maximum rat-
ing conditions for extended periods may affect device
reliability.
††
See
Section 4.1.2 “Input Voltage Limits”.
1.2
MCP6401/1R/1U/2/4 Electrical Specifications
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8v to +6.0v, V
SS
= GND,
V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2, V
L
= V
DD
D/2 and R
L
= 100 kΩ to V
L
(Refer to
Figure 1-1).
Parameters
Input Offset
Input Offset Voltage
V
OS
-4.5
—
—
Input Offset Drift with
Temperature
ΔV
OS
/ΔT
A
—
±0.8
±1.0
±1.5
±2.0
+4.5
—
—
—
mV
mV
mV
µV/°C
+125°C
+150°C
-40°C
to
+125°C
-40°C
to
+150°C
+125°C
+150°C
E, H
E
H
E
V
CM
= V
SS
V
CM
= V
SS
Sym
Min
Typ
Max
Units
Temp
Parts
(Note
1)
Conditions
—
±2.5
—
µV/°C
H
Power Supply
Rejection Ratio
PSRR
63
—
—
78
75
73
1
30
800
7
1
5
20
45
—
—
—
100
—
—
—
—
—
—
—
dB
dB
dB
pA
pA
pA
nA
pA
pA
pA
pA
+85°C
+125°C
+150°C
+85°C
+125°C
+150°C
E, H
E
H
E, H
E, H
E
H
E, H
E, H
E
H
V
CM
= V
SS
Input Bias Current and Impedance
Input Bias Current
I
B
—
—
—
—
Input Offset Current
I
OS
—
—
—
—
Note 1:
2:
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
Figure 2-14
shows how V
CMR
changes across temperature.
©
2009-2011 Microchip Technology Inc.
DS22229D-page 3
MCP6401/1R/1U/2/4/6/7/9
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8v to +6.0v, V
SS
= GND,
V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2, V
L
= V
DD
D/2 and R
L
= 100 kΩ to V
L
(Refer to
Figure 1-1).
Parameters
Common Mode Input
Impedance
Differential Input
Impedance
Common Mode
Common Mode Input
Voltage Range
(Note
2)
V
CMR
V
SS
-0.20
V
SS
-0.05
V
SS
V
SS
-0.30
V
SS
-0.15
V
SS
-0.10
Common Mode
Rejection Ratio
CMRR
56
—
—
63
—
—
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
Output
High-Level Output
Voltage
V
OH
1.790
—
—
5.980
—
—
Low-Level Output
Voltage
V
OL
—
—
—
—
—
—
Note 1:
2:
1.792
1.788
1.785
5.985
5.980
5.975
0.008
0.012
0.015
0.015
0.020
0.025
—
—
—
—
—
—
0.010
—
—
0.020
—
—
V
V
V
V
V
V
V
V
V
V
V
V
+125°C
+150°C
+125°C
+150°C
+125°C
+150°C
+125°C
+150°C
E, H
E
H
E, H
E
H
E, H
E
H
E, H
E
H
V
DD
= 1.8V
R
L
= 10 kΩ
0.5V input overdrive
V
DD
= 6.0V
R
L
= 10 kΩ
0.5V input overdrive
V
DD
= 1.8V
R
L
= 10 kΩ
0.5V input overdrive
V
DD
= 6.0V
R
L
= 10 kΩ
0.5V input overdrive
A
OL
90
—
—
110
105
100
—
—
—
dB
dB
dB
+125°C
+150°C
E, H
E
H
V
OUT
= 0.3V to V
DD
-
0.3V,
V
CM
= V
SS
—
—
—
—
—
—
71
68
65
78
76
75
V
DD
+0.20
V
DD
+0.05
V
DD
V
DD
+0.30
V
DD
+0.15
V
DD
+0.10
—
—
—
—
—
—
V
V
V
V
V
V
dB
dB
dB
dB
dB
dB
+125°C
+150°C
+125°C
+150°C
+125°C
+150°C
+125°C
+150°C
E, H
E
H
E, H
E
H
E, H
E
H
E, H
E
H
V
CM
= -0.2V to 2.0V,
V
DD
= 1.8V
V
CM
= -0.05V to 1.85V,
V
DD
= 1.8V
V
CM
= 0V to 1.8V,
V
DD
= 1.8V
V
CM
= -0.3V to 6.3V,
V
DD
= 6.0V
V
CM
= -0.15V to 6.15V,
V
DD
= 6.0V
V
CM
= -0.1V to 6.1V,
V
DD
= 6.0V
V
DD
= 6.0V
V
DD
= 1.8V
Sym
Z
CM
Z
DIFF
Min
—
—
Typ
10
13
||6
10
13
||6
Max
—
—
Units
Ω||pF
Ω||pF
Temp
Parts
(Note
1)
E, H
E, H
Conditions
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
Figure 2-14
shows how V
CMR
changes across temperature.
DS22229D-page 4
©
2009-2011 Microchip Technology Inc.
MCP6401/1R/1U/2/4/6/7/9
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8v to +6.0v, V
SS
= GND,
V
CM
= V
DD
/2, V
OUT
≈
V
DD
/2, V
L
= V
DD
D/2 and R
L
= 100 kΩ to V
L
(Refer to
Figure 1-1).
Parameters
Output Short-Circuit
Current
Power Supply
Supply Voltage
Quiescent Current
per Amplifier
Note 1:
2:
V
DD
I
Q
1.8
20
—
—
—
45
55
60
6.0
70
—
—
V
µA
µA
µA
+125°C
+150°C
E, H
E, H
E
H
I
O
= 0, V
DD
= 5.0V
V
CM
= 0.2V
DD
Sym
I
SC
Min
—
—
Typ
±5
±15
Max
—
—
Units
mA
mA
Temp
Parts
(Note
1)
E, H
E, H
Conditions
V
DD
= 1.8V
V
DD
= 6.0V
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
Figure 2-14
shows how V
CMR
changes across temperature.
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to +6.0V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈
V
DD
/2, V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 60 pF (Refer to
Figure 1-1).
Parameters
AC Response
Gain Bandwidth Product
Phase Margin
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
E
ni
e
ni
i
ni
—
—
—
3.6
28
0.6
—
—
—
µVp-p
nV/√Hz
fA/√Hz
E, H
E, H
E, H
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 1 kHz
GBWP
PM
SR
—
—
—
1
65
0.5
—
—
—
MHz
°
V/µs
E, H
E, H
E, H
G = +1 V/V
Sym
Min
Typ
Max
Units
Parts
Conditions
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
DD
= +1.8V to +6.0V and V
SS
= GND.
Parameters
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 5L-SC70
Thermal Resistance, 5L-SOT-23
Thermal Resistance, 8L-SOIC
Thermal Resistance, 8L-2x3 TDFN
Thermal Resistance, 14L-SOIC
Thermal Resistance, 14L-TSSOP
Note 1:
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
—
—
331
220.7
149.5
52.5
95.3
100
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
T
A
T
A
T
A
-40
-40
-65
—
—
—
+125
+150
+155
°C
°C
°C
E temp parts (Note
1)
H temp parts (Note
1)
Sym
Min
Typ
Max
Units
Conditions
The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +155°C.
©
2009-2011 Microchip Technology Inc.
DS22229D-page 5
京公网安备 11010802033920号
EEWORLD
