EEWORLDEEWORLDEEWORLD

Part Number

Search

MT57W2MH18JF-3

Description
DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
Categorystorage    storage   
File Size347KB,28 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT57W2MH18JF-3 Overview

DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

MT57W2MH18JF-3 Parametric

Parameter NameAttribute value
MakerMicron Technology
Parts packaging codeBGA
package instructionTBGA,
Contacts165
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length17 mm
memory density37748736 bit
Memory IC TypeDDR SRAM
memory width18
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX18
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width15 mm
ADVANCE
4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36
1.8V V
DD
, HSTL, DDRIIb4 SRAM
36Mb DDRII CIO SRAM
4-WORD BURST
Features
DLL circuitry for accurate output data placement
Pipelined double data rate operation
Common data input/output bus
Fast clock to valid data times
Full data coherency, providing most current data
Four-tick burst counter for reduced-address latency
Two input clocks (K and K#) for precise DDR timing
at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching—clock and data delivered
together to receiving device
Optional-use echo clocks (CQ and CQ#) for flexible
receive data synchronization
Simple control logic for easy depth expansion
Internally self-timed, registered writes
Core V
DD
= 1.8V (±0.1V); I/O V
DD
Q = 1.5V to V
DD
(±0.1V) HSTL
Clock-stop capability with µs restart
15mm x 17mm, 1mm pitch, 11 x 15 grid FBGA
package
User-programmable impedance output
JTAG boundary scan
MT57W4MH8J
MT57W4MH9J
MT57W2MH18J
MT57W1MH36J
Figure 1: 165-Ball FBGA
Table 1:
Valid Part Numbers
DESCRIPTION
4 Meg x 8, DDRIIb4 FBGA
4 Meg x 9, DDRIIb4 FBGA
2 Meg x 18, DDRIIb4 FBGA
1 Meg x 36, DDRIIb4 FBGA
PART NUMBER
MT57W4MH8JF-xx
MT57W4MH9JF-xx
MT57W2MH18JF-xx
MT57W1MH36JF-xx
Options
• Clock Cycle Timing
3ns (333 MHz)
3.3ns (300 MHz)
4ns (250 MHz)
5ns (200 MHz)
6ns (167 MHz)
7.5ns (133 MHz)
• Configurations
4 Meg x 8
4 Meg x 9
2 Meg x 18
1 Meg x 36
• Package
165-ball, 15mm x 17mm FBGA
NOTE:
Marking
1
-3
-3.3
-4
-5
-6
-7.5
MT57W4MH8J
MT57W4MH9J
MT57W2MH18J
MT57W1MH36J
F
1. A Part Marking Guide for the FBGA devices can be found on
Micron’s Web site—http://www.micron.com/numberguide.
The Micron
®
DDRII synchronous, pipelined burst
SRAM employs high-speed, low-power CMOS designs
using an advanced 6T CMOS process.
The DDR SRAM integrates an SRAM core with
advanced synchronous peripheral circuitry and a two-
bit burst counter. All synchronous inputs pass through
registers controlled by an input clock pair (K and K#)
and are latched on the rising edge of K and K#. The
synchronous inputs include all addresses, all data
inputs, active low load (LD#), read/write (R/W#), and
active LOW byte writes or nibble writes (BWx# or
NWx#). Write data is registered on the rising edges of
both K and K#. Read data is driven on the rising edge of
C and C#, if provided, or on the rising edge of K and K#
if C and C# are not provided.
General Description
36Mb: 1.8V V
DD
, HSTL, DDRIIb4 SRAM
MT57W1MH36J_B.fm – Rev. B, Pub. 2/03
1
©2003 Micron Technology, Inc.
PRODUCTS
AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
What methods are currently available on the market for measuring heart rate?
Recently I want to make a simple gadget to measure heart rate. I have tried piezoelectric ceramic pieces on the Internet, but the circuit is not good and I don't know where to start. Is there anyone h...
zhengzhoutie Medical Electronics
SMD transistor
The printed words are [size=3]7[/size][size=1]2p[/size] What model is the SMD transistor?...
renzhichang Analog electronics
DIY Mobile Phone+Sur
Alas, if I can't post the first thread about DIYing a mobile phone, my ideal is a modular mobile phone, with at least GSM, MCU, screen, audio, microphone, and other things can be deleted. We need a ke...
Sur DIY/Open Source Hardware
Detailed explanation of third-order intermodulation distortion and testing
[i=s]This post was last edited by btty038 on 2022-3-31 22:31[/i]A very important common parameter is the third-order intermodulation distortion (3rd - order IMD), which will be the focus of this artic...
btty038 RF/Wirelessly
Digital Amplitude-Frequency Equalization Power Amplifier
[i=s]This post was last edited by paulhyde on 2014-9-15 09:23[/i] Undergraduate Group F Topic - Digital Amplitude-Frequency Balanced Power Amplifier[color=#000000]Undergraduate[/color] [table][tr][td]...
dtcxn Electronics Design Contest
Discuss how to determine some NAND FLASH parameters when developing Linux to MTD devices.
When developing Linux to MTD devices, how to determine some parameters of NAND FLASH. struct nand_flash_dev { char * name;//Name. This is easy to understand int manufacture_id;//Manufacturer. It is in...
boming ARM Technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2912  2052  780  2366  252  59  42  16  48  6 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号