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MUR1054CT

Description
10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size52KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
Download Datasheet View All

MUR1054CT Overview

10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB

R
MUR1020CT THRU MUR1060CT
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 200 -600 Volts
Forward Current - 10.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Single rectifier construction
High surge capability
For use in low voltage ,high frequency inverters,
JF
MUR1040CT
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260
°
C/10 seconds,
0.25"(6.35mm)from case
Component in accordance to RoHS 2011
/
65
/
EU
0.159(4.05)
0.138(3.50)
0.053(1.34)
0.047(1.20)
TO-220AB
0.185(4.70)
0.410(10.41)
0.390(9.91)
0.161(4.10)
0.147(3.74)
DIA
0.114(2.90)
0.102(2.60)
0.283(7.20)
0.244(6.20)
0.175(4.44)
0.055(1.39)
0.045(1.14)
1
PIN
2
3
1.161(29.50)
1.106(28.10)
0.560(14.22)
0.516(13.10)
0.037(0.94)
0.027(0.68)
0.105(2.67)
0.023(0.58)
0.014(0.35)
0.114(2.90)
0.098(2.50)
MECHANICAL DATA
Case: JEDEC TO-220AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked
Mounting Position: Any
0.208(5.28)
0.192(4.88)
0.095(2.41)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
MUR
1020CT
200
140
200
MUR
1040CT
400
280
400
5.0
10.0
120
.
0
0.975
1.3
5
250
35
2.5
-55 to+150
-55 to+150
1.7
MUR
1060CT
600
420
600
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Per leg
Total device
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
R
θJC
T
J
T
STG
V
olts
V
olts
V
olts
A
mps
A
mps
V
olts
μA
ns
°C/W
°C
°C
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 5.0 A per leg(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T
A
=25
°
C
T
A
=125
°
C
Maximum Reverse Recovery Time (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
Notes:
1. Pulse test: 300
μ
s pulse width,1% duty cycle
2. Reverse recovery test conditions I
F
=0.5A,I
R
=1.0A, Irr=0.5A
3. Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
9-26
HTTP
://
WWW.JINGHENGGROUP.COM
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