This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon MOSFETs (Small Signal)
UP0497A
Silicon N-channel MOSFET (FET1)
Silicon P-channel MOSFET (FET2)
For switching circuits
Features
Two elements incorporated into one package (MOSFET)
Incorporating a built-in gate protection-diode
Downsizing of the equipment and costs can be reduced through reduction of
the number of parts
Package
Code
SSMini6-F1
Marking Symbol: 4E
Name
Pin
1. Source (FET1)
4. Source (FET2)
2. Gate (FET1)
5. Gate (FET2)
3. Drain (FET2)
6. Drain (FET1)
2SJ0674
+
2SK3938
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Drain-source surrender voltage
Drain current
Symbol
V
DSS
V
GSS
I
D
I
DP
FET1
Gate-source surrender voltage
Peak drain current
Drain-source surrender voltage
Drain current
V
DSS
V
GSS
I
D
I
DP
P
T
T
ch
FET2
Gate-source surrender voltage
Peak drain current
Ma
int
en
an
ce
/D
isc
Storage temperature
T
stg
tin
Overall Channel temperature
ue
Total power dissipation
-
55 to +125
Pl
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Internal Connection
(D1)
6
(G2)
5
M
ain
Di
sc te
on na
tin nc
ue e/
d
Basic Part Number
Rating
30
±12
100
200
–30
Unit
V
V
mA
mA
V
V
±12
–100
–200
125
125
mA
mA
°C
°C
(S2)
4
FET1
FET2
1
(S1)
2
(G1)
3
(D2)
di
mW
on
Publication date: June 2007
SJF00057AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP0497A
Electrical Characteristics
T
a
= 25°C±3°C
FET1
Parameter
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
Drain-source ON resistance
Forward transfer conductance
Symbol
V
DSS
I
DSS
I
GSS
V
TH
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
on
t
off
Conditions
I
D
= 10
mA,
V
GS
= 0
V
DS
= 20 V, V
GS
= 0
V
GS
=
±10
V, V
DS
= 0
I
D
= 1.0
mA,
V
DS
= 3.0 V
I
D
= 10 mA, V
GS
= 2.5 V
I
D
= 10 mA, V
GS
= 4.0 V
I
D
= 10 mA, V
DS
= 3.0 V, f = 1 kHz
V
DS
= 3 V, V
GS
= 0, f = 1 MHz
20
0.5
1.0
7
5
55
12
10
6
350
350
Min
30
1.0
±10
1.5
12
8
Typ
Max
Unit
V
mA
mA
V
W
mS
pF
pF
pF
ns
ns
Reverse transfer capacitance (Common source)
Turn-on time
*
Turn-off time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: t
on
, t
off
measurement circuit
V
OUT
90%
290
Ω
10%
V
GS
V
GS
=
0 V to 3 V
V
OUT
100
µF
V
DD
=
3 V
90%
10%
50
Ω
FET2
Parameter
Symbol
V
DSS
I
DSS
I
GSS
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
V
DD
= 3 V, V
GS
= 0 V to 3 V, I
D
= 10 mA
V
DD
= 3 V, V
GS
= 3 V to 0 V, I
D
= 10 mA
t
on
t
off
M
ain
Di
sc te
on na
tin nc
ue e/
d
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Conditions
Min
-30
Typ
Max
-1.0
±10
30
18
Unit
V
mA
mA
V
W
mS
pF
pF
pF
ns
ns
/D
isc
Gate threshold voltage
on
Gate-source cutoff current
tin
V
TH
Drain-source cutoff current
ue
di
Drain-source surrender voltage
I
D
=
-10 mA,
V
GS
= 0
V
DS
=
-20
V, V
GS
= 0
V
GS
=
±10
V, V
DS
= 0
I
D
=
-1.0 mA,
V
DS
=
-3.0
V
I
D
=
-10
mA, V
GS
=
-2.5
V
-
0.5
-1.0
13
9
-1.5
Forward transfer conductance
Ma
int
en
an
Drain-source ON resistance
ce
R
DS(on)
Y
fs
C
iss
C
oss
C
rss
t
on
t
off
I
D
=
-10
mA, V
GS
=
-4.0
V
I
D
=
-10
mA, V
DS
=
-3.0
V, f = 1 kHz
V
DS
=
-3
V, V
GS
= 0, f = 1 MHz
20
40
12
7
Short-circuit input capacitance (Common source)
Short-circuit output capacitance (Common source)
Reverse transfer capacitance (Common source)
Turn-on time
*
Turn-off time
*
13
Pl
V
DD
=
-3
V, V
GS
= 0 V to
-3
V, I
D
=
-10
mA
V
DD
=
-3
V, V
GS
=
-3
V to 0 V, I
D
=
-10
mA
300
400
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: t
on
, t
off
measurement circuit
V
GS
V
OUT
10%
280
Ω
90%
V
GS
=
0 V to
−3
V
50
Ω
90%
V
OUT
t
on
t
off
10%
100
µF
V
DD
= −3
V
2
SJF00057AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
Pl
pla nc
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
京公网安备 11010802033920号
EEWORLD
