AUIRFU5305 datasheet, PDF - EEWORLD Datasheet

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AUIRFU5305: Description31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size299KB，13 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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AUIRFU5305 Overview

31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

AUIRFU5305 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	TO-251AA
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	280 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (Abs) (ID)	31 A
Maximum drain current (ID)	31 A
Maximum drain-source on-resistance	0.065 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	110 W
Maximum pulsed drain current (IDM)	110 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD-96341

AUTOMOTIVE MOSFET

AUIRFR5305

AUIRFU5305

HEXFET

Power MOSFET

Features

Advanced Planar Technology

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(BR)DSS

-55V

0.065Ω

-31A

DS(on)

max.

Description

Specifically designed for Automotive applications, this Cellular

Planar design of HEXFET® Power MOSFETs utilizes the

latest processing techniques to achieve low on-resistance per

silicon area. This benefit combined with the fast switching

speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in Automotive

and a wide variety of other applications.

D-Pak

AUIRFR5305

I-Pak

AUIRFU5305

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal

resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T

)

is 25°C, unless otherwise specified.

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 100°C

= 25°C

dv/dt

STG

Thermal Resistance

Parameter

θJC

θJA

Junction-to-Case

Junction-to-Ambient (PCB mount)

∗∗

Junction-to-Ambient ***

Typ.

–––

Max.

1.4

110

Units

°C/W

Continuous Drain Current, V

@ -10V

Continuous Drain Current, V

@ -10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Max.

-31

-22

-110

110

0.71

± 20

280

-16

-5.0

-55 to + 175

300 (1.6mm from case )

Units

W/°C

V/ns

°C

Ãh

Ãeh

HEXFET

is a registered trademark of International Rectifier.

*Qualification

standards can be found at http://www.irf.com/

www.irf.com

12/06/10

AUIRFU5305 Related Products

	AUIRFU5305	AUIRF5305TRL	AUIRF5305TRR	AUIRFR5305TR
Description	31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it lead-free?	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to
Parts packaging code	TO-251AA	TO-252AA	TO-252AA	TO-252AA
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3
Reach Compliance Code	compliant	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	280 mJ	280 mJ	280 mJ	280 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V	55 V	55 V
Maximum drain current (Abs) (ID)	31 A	31 A	31 A	31 A
Maximum drain current (ID)	31 A	31 A	31 A	31 A
Maximum drain-source on-resistance	0.065 Ω	0.065 Ω	0.065 Ω	0.065 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251AA	TO-252AA	TO-252AA	TO-252AA
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	3	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	110 W	110 W	110 W	110 W
Maximum pulsed drain current (IDM)	110 A	110 A	110 A	110 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES	YES
Terminal surface	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL	MATTE TIN OVER NICKEL
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	-	1

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