PD-96341
AUTOMOTIVE MOSFET
AUIRFR5305
AUIRFU5305
HEXFET
®
Power MOSFET
D
Features
l
l
l
l
l
l
l
l
l
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
(BR)DSS
-55V
0.065Ω
-31A
G
S
R
DS(on)
max.
I
D
D
D
Description
Specifically designed for Automotive applications, this Cellular
Planar design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
G
D
S
G
D
S
D-Pak
AUIRFR5305
G
D
I-Pak
AUIRFU5305
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T
A
)
is 25°C, unless otherwise specified.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
∗∗
Junction-to-Ambient ***
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-31
-22
-110
110
0.71
± 20
280
-16
11
-5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
h
Ãh
dh
Ãeh
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
12/06/10
AUIRFR/U5305
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
-55
–––
–––
-2.0
8.0
–––
–––
–––
–––
Typ.
–––
-0.034
–––
–––
–––
–––
–––
–––
–––
Max.
–––
–––
0.065
-4.0
–––
-25
-250
100
-100
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -16A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -25V, I
D
= -16A
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
V
GS
= -20V
V
GS
= 20V
f
h
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
14
66
39
63
4.5
7.5
1200
520
250
Max.
63
13
29
–––
–––
–––
–––
–––
Units
nC
Conditions
I
D
= -16A
V
DS
= -44V
V
GS
= -10V See Fig.6 and 13
V
DD
= -28V
I
D
= -16A
R
G
= 6.8
Ω
R
D
= 1.6
Ω
See Fig.10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz,see Fig.5
fh
ns
fh
D
nH
–––
–––
–––
–––
pF
G
S
h
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
71
170
Max.
-31
Units
A
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= -16A, V
GS
= 0V
T
J
= 25°C, I
F
= -16A
di/dt = 100A/µs
Ã
-110
-1.3
110
250
V
ns
nC
f
fh
Repetitive rating; pulse width limited by
Pulse width
≤
300µs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact.
Uses IRF5305 data and test conditions.
max. junction temperature. (See Fig. 11)
V
DD
= -25V, starting T
J
= 25°C, L = 2.1mH
R
G
= 25Ω, I
AS
= -16A. (See Figure 12)
T
J
≤
175°C
* *When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
*** Uses typical socket mount.
I
SD
≤
-16A, di/dt
≤
-280A/µs, V
DD
≤
V
(BR)DSS
,
2
www.irf.com
AUIRFR/U5305
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D PAK
I-PAK
MSL1
N/A
Class M2 (200V)
( per AEC-Q101-002)
Class H1B (1000V)
(per AEC-Q101-001)
Class C5 (1125V)
(per AEC-Q101-005)
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFR/U5305
1000
1000
VGS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
100
100
10
10
-4.5V
20µs PULSE WIDTH
T
C
= 175°C
1
10
-4.5V
20µs PULSE WIDTH
Tc = 25°C
A
0.1
1
10
100
1
1
0.1
100
A
-V , Drain-to-Source Voltage (V)
DS
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25°C
T
J
= 175°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -27A
-I
D
, Drain-to-Source Current (A)
1.5
10
1.0
0.5
1
4
5
6
7
V
DS
= -25V
20µs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= -10V
80 100 120 140 160 180
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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AUIRFR/U5305
2500
-V
GS
, Gate-to-Source Voltage (V)
2000
C
iss
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -16A
V
DS
= -44V
V
DS
= -28V
16
C, Capacitance (pF)
1500
C
oss
12
1000
8
C
rss
500
4
0
1
10
100
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
100
100
100µs
10
T
J
= 175°C
T
J
= 25°C
1ms
10
0.4
0.8
1.2
1.6
V
GS
= 0V
A
2.0
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
100
A
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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