KM41C1000DZ-L8 datasheet, PDF - EEWORLD Datasheet

KM41C1000DZ-L8: DescriptionFast Page DRAM, 1MX1, 80ns, CMOS, PZIP19, 0.400 INCH, ZIP-20/19; Categorystorage storage; File Size55KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM41C1000DZ-L8 Overview

Fast Page DRAM, 1MX1, 80ns, CMOS, PZIP19, 0.400 INCH, ZIP-20/19

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	ZIP
package instruction	ZIP, ZIP20,.1
Contacts	20
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	80 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	SEPARATE
JESD-30 code	R-PZIP-T19
JESD-609 code	e0
length	26.165 mm
memory density	1048576 bit
Memory IC Type	FAST PAGE DRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	19
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	ZIP
Encapsulate equivalent code	ZIP20,.1
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Maximum seat height	10.16 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	1.27 mm
Terminal location	ZIG-ZAG
Maximum time at peak reflow temperature	NOT SPECIFIED
width	2.96 mm

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