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KM41C1001CJ-7

Description
Nibble Mode DRAM, 1MX1, 70ns, CMOS, PDSO20, PLASTIC, SOJ-26/20
Categorystorage    storage   
File Size56KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM41C1001CJ-7 Overview

Nibble Mode DRAM, 1MX1, 70ns, CMOS, PDSO20, PLASTIC, SOJ-26/20

KM41C1001CJ-7 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSOJ
package instructionSOJ, SOJ20/26,.34
Contacts20
Reach Compliance Codeunknown
ECCN codeEAR99
access modeNIBBLE
Maximum access time70 ns
Other featuresRAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
I/O typeSEPARATE
JESD-30 codeR-PDSO-J20
JESD-609 codee0
length17.145 mm
memory density1048576 bit
Memory IC TypeNIBBLE MODE DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals20
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ20/26,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle512
Maximum seat height3.68 mm
Maximum standby current0.001 A
Maximum slew rate0.065 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
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