MBRF3050CTC0G datasheet, PDF - EEWORLD Datasheet

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MBRF3050CTC0G: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN; CategoryDiscrete semiconductor diode; File Size226KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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MBRF3050CTC0G Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

MBRF3050CTC0G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	ITO-220AB, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW POWER LOSS, UL RECOGNIZED
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	200 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	50 V
Maximum reverse current	200 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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MBRF3035CT thru MBRF30200CT

Taiwan Semiconductor

CREAT BY ART

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- UL Recognized File # E-326243

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

Dual Common Cathode Schottky Rectifier

ITO-220AB

MECHANICAL DATA

Case:

ITO-220AB

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

with prefix "H" on packing code meet JESD 201 class 2 whisker test

Polarity:

As marked

Mounting torque:

5 in-lbs maximum

Weight:

1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25℃ unless otherwise noted)

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

Peak repetitive reverse surge current (Note 1)

Maximum instantaneous forward voltage (Note 2)

=15A, T

=25℃

=15A, T

=125℃

=30A, T

=25℃

=30A, T

=125℃

Maximum reverse current @ rated VR

Voltage rate of change (Rated V

)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: tp = 2.0

μs,

1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

=25

℃

=125

℃

SYMBOL 3035

RRM

RMS

F(AV)

FRM

FSM

RRM

0.70

0.60

0.82

0.73

dV/dt

θJC

STG

0.75

0.65

0.90

0.78

0.2

10000

- 55 to +150

0.84

0.70

0.94

0.82

3045

3050

3060

200

0.5

0.95

0.80

1.05

0.92

V/μs

3090 30100 30150 30200 UNIT

100

150

105

150

200

140

200

C/W

Document Number: DS_D1308022

Version: L13

MBRF3050CTC0G Related Products

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Description	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 50V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 150V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 150V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 60V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 90V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	ITO-220AB, 3 PIN	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED	LOW POWER LOSS, UL RECOGNIZED
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V	1.05 V	0.82 V	1.05 V	1.05 V	0.9 V	0.94 V	0.94 V	0.94 V
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Maximum non-repetitive peak forward current	200 A	200 A	200 A	200 A	200 A	200 A	200 A	200 A	200 A
Number of components	2	2	2	2	2	2	2	2	2
Phase	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	15 A	15 A	15 A	15 A	15 A	15 A	15 A	15 A	15 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	50 V	200 V	35 V	150 V	150 V	60 V	90 V	90 V	90 V
Maximum reverse current	200 µA	200 µA	200 µA	200 µA	200 µA	200 µA	200 µA	200 µA	200 µA
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maker	Taiwan Semiconductor	-	-	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor

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