2N3700HR
Hi-Rel 80 V - 1 A NPN bipolar transistor
Features
3
BV
CEO
I
C
(max)
H
FE
at 10 V - 150 mA
Operating temperature range
■
■
■
■
■
■
80 V
1A
> 100
-65°C to +200°C
4
1
2
3
2
1
TO-18
3
LCC-3
Hi-Rel NPN bipolar transistor
Linear gain characteristics
ESCC qualified
European preferred part list - EPPL
100 krad low dose rate
Radiation level: lot specific total dose contact
marketing for specified level
Figure 1.
2
1
LCC-3UB
Internal schematic diagram
Description
The 2N3700HR is a silicon planar epitaxial NPN
transistor in TO-18 and LCC-3 packages. It is
specifically designed for aerospace Hi-Rel
applications and ESCC qualified according to the
5201-004 specification. In case of conflict
between this datasheet and ESCC detailed
specification, the latter prevails.
Table 1.
Device summary
Order codes
2N37000UB1
2N37000UBSW
2N37000UB06
2N37000UB07
SOC37000
SOC3700SW
SOC3700HRB
2N3700T1
2N3700HR
1.
ESCC part num.
-
5201/004/07
5201/004/06
5201/004/07
-
5201/004/05
Qual. level
Eng. model
ESCC flight
ESCC flight
ESCC flight
Eng. model
ESCC flight
Rad level Packages
LCC-3UB
100 krad
LCC-3UB
LCC-3UB
LCC-3UB
LCC-3
100 krad
LCC-3
LCC-3
TO-18
TO-18
Lead finish
Gold
Solder dip
Gold
Solder dip
Gold
Solder dip
Gold/Solder dip
(1)
Gold
Gold/Solder dip
(1)
Mass (g) EPPL
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.40
0.40
-
Y
-
-
-
Y
Y
-
-
5201/004/04 or 05 ESCC flight
-
Eng. model
5201/004/01 or 02 ESCC flight
Depending ESCC part number mentioned on the purchase order
November 2011
Doc ID 15354 Rev 4
1/12
www.st.com
12
Electrical ratings
2N3700HR
1
Electrical ratings
Table 2.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Total dissipation at T
amb
≤
25 °C
for 2N3700HR
for SOC3700HRB
for SOC3700HRB
(1)
Total dissipation at T
c
≤
25 °C
for 2N3700HR
140
80
7
1
0.5
0.5
0.76
Value
Unit
V
V
V
A
W
W
W
P
tot
1.8
-65 to 200
200
W
°C
°C
T
stg
T
J
Storage temperature
Max. operating junction temperature
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Table 3.
Symbol
R
thJC
R
thJA
Thermal data for through-hole package
Parameter
Thermal resistance junction-case
__
Thermal resistance junction-ambient
__
max
max
TO-18
97
350
Unit
°C/W
°C/W
Table 4.
Symbol
R
thJA
R
thJA
Thermal data for SMD package
Parameter
Thermal resistance junction-ambient
Thermal resistance junction-ambient
(1)
max
max
SOC
350
230
Unit
°C/W
°C/W
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
2/12
Doc ID 15354 Rev 4
2N3700HR
Electrical characteristics
2
Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 5.
Symbol
Electrical characteristics
Parameter
Collector cut-off
current (I
E
= 0)
Emitter cut-off current
(I
C
= 0)
Collector-base
breakdown voltage
(I
E
= 0)
Collector-emitter
breakdown voltage
(I
B
= 0)
Emitter-base
breakdown voltage
(I
C
= 0)
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Test conditions
V
CB
= 90 V
V
CB
= 90 V
V
CB
= 90 V
V
EB
= 5 V
Min.
Typ.
Max.
10
100
10
10
Unit
nA
nA
µA
nA
I
CBO
T
amb
= 110 °C
T
amb
= 150 °C
I
EBO
V
(BR)CBO
I
C
= 100 µA
140
V
V
(BR)CEO
(1)
I
C
= 30 mA
80
V
V
(BR)EBO
V
CE(sat) (1)
I
E
= 100 µA
I
C
= 150 mA
I
C
= 500 mA
I
B
= 15 mA
I
B
= 50 mA
7
0.2
0.5
0.75
0.65
90
100
50
40
I
C
= 50 mA
5
12
60
0.87
0.77
1
0.9
300
V
V
V
V
V
V
BE(sat)
(1)
I
B
= 15 mA
I
C
= 150 mA
I
B
= 15 mA
I
C
= 150 mA
T
amb
= 110 °C
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
T
amb
= - 55 °C
V
CE
= 10 V
f = 20 MHz
V
CB
= 10 V
V
EB
= 0.5 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
h
FE (1)
DC current gain
h
fe
C
CBO
C
IBO
Small signal current
gain
Output capacitance
(I
E
= 0)
Input capacitance
(I
C
= 0)
f = 1 MHz
f = 1 MHz
pF
pF
1. Pulsed duration = 300 µs, duty cycle
≤
2 %
Doc ID 15354 Rev 4
3/12
Electrical characteristics
2N3700HR
2.1
Electrical characteristics (curves)
Figure 2.
DC current gain
(V
CE
=1 V)
Figure 3.
DC current gain
(V
CE
=10 V)
Figure 4.
Collector emitter saturation
voltage
Figure 5.
Base emitter saturation
voltage
4/12
Doc ID 15354 Rev 4
2N3700HR
Electrical characteristics
2.2
Test circuit
Figure 6.
Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
Doc ID 15354 Rev 4
5/12
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