LED NUMERIC DISPLAY, 1 DIGIT
BL-S200X-11
Super Bright
Electrical-optical characteristics: (Ta=25 )
(Test Condition: IF=20mA)
Part No
Common Cathode
BL-S200C-11S-XX
BL-S200C-11D-XX
BL-S200C-11UR-XX
BL-S200C-11E-XX
BL-S200C-11Y-XX
BL-S200C-11G-XX
Common Anode
BL-S200D-11S-XX
BL-S200D-11D-XX
BL-S200D-11UR-XX
BL-S200D-11E-XX
BL-S200D-11Y-XX
BL-S200D-11G-XX
Emitte
d Color
Hi Red
Super
Red
Ultra
Red
Orange
Yellow
Green
Ultra Bright
Electrical-optical characteristics: (Ta=25 )
(Test Condition: IF=20mA)
Part No
Common Cathode
BL-S200C-11UHR-X
X
Common Anode
Emitted Color
BL-S200C-11UE-XX
BL-S200C-11YO-XX
BL-S200C-11UY-XX
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.b
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BL-S200D-11UHR-X
X
Ultra Red
BL-S200D-11UE-XX
BL-S200D-11YO-XX
Ultra Amber
Ultra Yellow
Ultra Green
BL-S200D-11UY-XX
BL-S200D-11UG-XX
BL-S200D-11PG-XX
BL-S200D-11B-XX
BL-S200D-11W-XX
Ultra Blue
Ultra White
Ultra Orange
BL-S200C-11UG-XX
BL-S200C-11PG-XX
BL-S200C-11B-XX
BL-S200C-11W-XX
Ultra Pure Green
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£
-XX: Surface / Lens color
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
1
Black
White
diffused
¡
¡
¡
¡
¢
¢
¢
¢
Features:
50.80mm (2.0”) Single digit numeric display series, ALPHA-NUMERIC TYPE
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Chip
Material
GaAlAs/GaAs,SH
GaAlAs/GaAs,DH
GaAlAs/GaAs,DDH
GaAsP/GaP
λ
P
(nm)
660
660
660
VF
Unit:V
Typ
1.85
Max
2.20
Iv
TYP.(mcd
)
40
u
tl
GaP/GaP
Chip
InGaN
InGaN
InGaN
GaAsP/GaP
.
x
635
585
570
λ
P
(nm)
645
630
619
590
574
525
470
/
m
o
c
1.85
2.20
1.85
2.20
2.10
2.50
2.10
2.50
2.20
2.50
VF
Unit:V
Typ
Max
2.10
2.10
2.10
2.10
2.20
3.80
2.70
2.70
2.50
2.50
2.50
2.50
2.50
4.50
4.20
4.20
60
80
40
40
45
Material
AlGaInP
AlGaInP
AlGaInP
AlGaInP
AlGaInP
Iv
TYP.(mcd
)
80
55
55
55
60
75
80
95
2
Gray
Red
Diffused
3
Red
Green
Diffused
4
Green
Yellow
Diffused
5
LED NUMERIC DISPLAY, 1 DIGIT
BL-S200X-11
Absolute maximum ratings (Ta=25
Parameter
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
Lead Soldering Temperature
T
SOL
-40 to +85
Max.260±5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
Absolute maximum ratings (Ta=25°
C)
Parameter
Forward Current I
F
Power Dissipation P
d
Reverse Voltage V
R
Peak Forward Current I
PF
(Duty 1/10 @1KHZ)
Operation Temperature T
OPR
Storage Temperature T
STG
T
SOL
UHR
30
75
5
150
UE
30
65
5
150
YO
30
65
5
UY
30
65
5
Lead Soldering Temperature
Max.260±5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
w
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¦
¥
¥
¦
e
.b
w
w
150
u
tl
150
.
x
UG
30
75
5
150
PG
m
o
c
UB
UW
30
110
5
30
120
5
30
120
5
150
100
100
Unit
mA
mW
V
mA
-40 to +80
-40 to +85
¤
¤
¤
¤
¡
¡
¡
¡
)
D
25
60
5
150
25
60
5
150
UR
25
60
5
150
-40 to +80
E
25
60
5
150
Y
25
60
5
150
G
30
65
5
150
Unit
mA
mW
V
mA
S
LED NUMERIC DISPLAY, 1 DIGIT
BL-S200X-11
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is 0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
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§
Package configuration & Internal circuit diagram
w
e
.b
w
w
u
tl
.
x
m
o
c
LED NUMERIC DISPLAY, 1 DIGIT
BL-S200X-11
1.0
0.5
0
350
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH( p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
50
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
3
2
1
0.5
0.2
0.1
-30
-20
-10
1
8
64 5
2 3
4.0
40
30
20
10
0
1.2
3.0
1.6
2.0
2.4
2.6
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
w
0
10
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
1
5
4
2
3
10
9
8
7
6
5
4
3
2
20
30
40
50
60
70
1
1
Ipeak MAX.
IDC MAX.
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
Ipeak MAX.
IDC MAX.
4
3
2
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
AMBIENT TEMPERATURE Ta( )
10
100
1000
10,000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
NOTE:25
free air temperature unless otherwise specified
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REV NO: V.2
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©
e
.b
w
w
2.0
1.0
0
3.0
20
40
60
u
tl
1
5
B
100
80
¨
Typical electrical-optical characteristics curves:
(A)
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
400
450
500
550
600
650
700
750
800
850
900
950
1000
.
x
50
40
30
20
10
0
FORWARD CURRENT(mA)
m
o
c
20
40
60
80
100
RELATIVE LUMINOUS INTENSITY
1
6
2,4,8,A
3
5
10,000
Power technology
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