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BUK9629-100B

Description
TrenchMOS⑩ logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size103KB,15 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BUK9629-100B Overview

TrenchMOS⑩ logic level FET

BUK9629-100B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code_compli
ConfigurationSingle
Maximum drain current (Abs) (ID)46 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)157 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
BUK95/9629-100B
TrenchMOS™ logic level FET
Rev. 01 — 18 April 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability:
BUK9529-100B in SOT78 (TO-220AB)
BUK9629-100B in SOT404 (D
2
-PAK).
1.2 Features
s
Very low on-state resistance
s
175
°C
rated
s
Q101 compliant
s
Logic level compatible.
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V, 24 V and 42 V loads
s
General purpose power switching.
1.4 Quick reference data
s
E
DS(AL)S
152 mJ
s
I
D
46 A
s
R
DSon
= 24 mΩ (typ)
s
P
tot
157 W.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
2
MBK106
Simplified outline
mb
Symbol
mb
[1]
d
g
s
MBB076
1 2 3
1
3
MBK116
SOT78 (TO-220AB)
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
SOT404 (D
2
-PAK)

BUK9629-100B Related Products

BUK9629-100B BUK9529-100B
Description TrenchMOS⑩ logic level FET TrenchMOS⑩ logic level FET
Is it Rohs certified? conform to conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code _compli unknow
Configuration Single Single
Maximum drain current (Abs) (ID) 46 A 46 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e3 e3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 157 W 157 W
surface mount YES NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
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