New Product
V20100R
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.54 V at I
F
= 5 A
FEATURES
TMBS
®
TO-220AB
2
1
PIN 1
PIN 3
PIN 2
CASE
3
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
•
Halogen-free according to IEC 61249-2-21
definition
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A
T
J
max.
2 x 10 A
100 V
120 A
0.65 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
V
RRM
V20100R
100
20
A
10
120
10 000
- 40 to + 150
A
V/µs
°C
UNIT
V
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Document Number: 89194
Revision: 30-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
New Product
V20100R
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
TEST CONDITIONS
I
R
= 1.0 mA
I
F
= 5 A
Instantaneous forward voltage per diode
I
F
= 10 A
I
F
= 5 A
I
F
= 10 A
V
R
= 70 V
Reverse current per diode
V
R
= 100 V
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
≤
40 ms
T
A
= 25 °C
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
SYMBOL
V
BR
TYP.
100 (minimum)
0.62
0.81
0.54
0.65
4
4
-
5.6
MAX.
-
-
0.90
V
-
0.72
-
-
150
15
µA
mA
µA
mA
UNIT
V
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
θJC
V20100R
2.8
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
PREFERRED P/N
V20100R-M3/4W
UNIT WEIGHT (g)
1.88
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
25
10
Resistive or Inductive Load
D = 0.5
D = 0.3
6
D = 0.2
4
D = 0.1
T
2
D = t
p
/T
0
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
t
p
D = 1.0
D = 0.8
Average Forward Rectified Current (A)
15
10
5
Mounted on specific Heatsink
0
Average Power Loss (W)
20
V20100R
8
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89194
Revision: 30-Nov-10
New Product
V20100R
Vishay General Semiconductor
100
10 000
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Instantaneous Forward Current (A)
10
Junction Capacitance (pF)
1
T
A
= 25 °C
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Junction to Case
10
T
A
= 150 °C
T
A
= 125 °C
1
T
A
= 100 °C
0.1
0.01
T
A
= 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
Document Number: 89194
Revision: 30-Nov-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
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Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12
1
Document Number: 91000