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TGF2080_15

Description
800um Discrete GaAs pHEMT
File Size189KB,6 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
Download Datasheet Compare View All

TGF2080_15 Overview

800um Discrete GaAs pHEMT

TGF2080
800um Discrete GaAs pHEMT
Applications
Defense & Aerospace
High-Reliability
Test and Measurement
Commercial
Broadband Wireless
Product Features
Frequency Range: DC - 20 GHz
29.5 dBm Typical Output Power - P1dB
11.5 dB Typical Gain @ 12 GHz
56% Typical PAE @ 12 GHz
No Vias
Technology: 0.25 um GaAs pHEMT
Chip Dimensions: 0.41 x 0.54 x 0.10 mm
Functional Block Diagram
General Description
The TriQuint TGF2080 is a discrete 800-Micron pHEMT
which operates from DC to 20 GHz. The TGF2080 is
designed using TriQuint’s proven standard 0.25um
power pHEMT production process. This process
features advanced techniques to optimize microwave
power and efficiency at high drain bias operating
conditions.
The TGF2080 typically provides 29.5 dBm of output
power at P1dB with gain of 11.5 dB and 56% power-
added efficiency at 1 dB compression.
This
performance makes the TGF2080 appropriate for high
efficiency applications. The protective overcoat layer
with silicon nitride provides a level of environmental
robustness and scratch protection.
Lead-free and RoHS compliant.
Pad Configuration
Pad Dimensions
G (71um X 71um)
D (71um X 71um)
S (121um X 71um)
S (121um X 96um)
Terminals
Gate
Drain
Source (outermost)
Source (center)
Ordering Information
Part
TGF2080
ECCN
EAR99
Description
800um GaAs pHEMT
Datasheet: Rev B 06-26-13
© 2013 TriQuint
- 1 of 6-
Disclaimer: Subject to change without notice
www.triquint.com

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