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934066914115

Description
Power Field-Effect Transistor, 100A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235
CategoryDiscrete semiconductor    The transistor   
File Size236KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric View All

934066914115 Overview

Power Field-Effect Transistor, 100A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235

934066914115 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionSMALL OUTLINE, R-PSSO-G4
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresHIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)248 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.0021 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)1128 A
GuidelineIEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
PSMN1R8-40YLC
22 August 2012
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using
NextPower technology
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High reliability Power SO8 package, qualified to 175°C
Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
Ultra low Rdson and low parasitic inductance
1.3 Applications
DC-to-DC converters
Load switching
Power OR-ing
Server power supplies
Sync rectifier
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
Conditions
25 °C ≤ T
j
≤ 175 °C
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C;
Fig. 2
[1]
Min
-
-
-
-55
Typ
-
-
-
-
Max
40
100
272
175
Unit
V
A
W
°C
Static characteristics
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 12
Dynamic characteristics
Q
GD
gate-drain charge
V
GS
= 4.5 V; I
D
= 25 A; V
DS
= 20 V;
Fig. 15; Fig. 14
-
10.9
-
nC
-
1.5
1.8
-
1.8
2.1
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