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PDTC143TS

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size398KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PDTC143TS Overview

Small Signal Bipolar Transistor

PDTC143TS Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompli
Other featuresBUILT-IN BIAS RESISTORS
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)200
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia

PDTC143TS Related Products

PDTC143TS 934057166315 PDTC143TE PDTC143TEF PDTC143TEFT/R PDTC143TT PDTC143TTT/R PDTC143TT/T3 PDTC143TU
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
Maker Nexperia Nexperia Nexperia Nexperia Nexperia Nexperia Nexperia Nexperia Nexperia
package instruction CYLINDRICAL, O-PBCY-T3 CHIP CARRIER, R-PBCC-N3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli compliant compliant compliant compliant compliant compliant compliant compliant
Other features BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS BUILT-IN BIAS RESISTORS
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 200 200 200 200 200 200 200 200 200
JESD-30 code O-PBCY-T3 R-PBCC-N3 R-PDSO-G3 R-PDSO-F3 R-PDSO-F3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CYLINDRICAL CHIP CARRIER SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED NOT SPECIFIED 260
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN NPN
surface mount NO YES YES YES YES YES YES YES YES
Terminal form THROUGH-HOLE NO LEAD GULL WING FLAT FLAT GULL WING GULL WING GULL WING GULL WING
Terminal location BOTTOM BOTTOM DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED 30
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
JESD-609 code e3 e3 e3 e3 - e3 e3 - e3
Terminal surface Matte Tin (Sn) Tin (Sn) Tin (Sn) TIN - Tin (Sn) Tin (Sn) - Tin (Sn)
Humidity sensitivity level - 1 1 - - 1 1 - 1
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