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PSMN8R0-80YLX

Description
PSMN8R0-80YL - N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin
CategoryDiscrete semiconductor    The transistor   
File Size732KB,12 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
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PSMN8R0-80YL - N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin

PSMN8R0-80YLX Parametric

Parameter NameAttribute value
Brand NameNexperi
MakerNexperia
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PSSO-G4
Contacts4
Manufacturer packaging codeSOT669
Reach Compliance Codecompli
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)148 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.0085 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)423 A
GuidelineIEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PSMN8R0-80YL
20 October 2016
N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product is designed and qualified for use in a wide range of power
supply & motor control equipment.
2. Features and benefits
Advanced TrenchMOS provides low R
DSon
and low gate charge
Logic level gate operation
Avalanche rated, 100% tested
LFPAK provides maximum power density in a Power SO8 package
3. Applications
Synchronous rectification in power supply equipment
Chargers & adaptors with V
out
< 10 V
Fast charge & USB-PD applications
Battery powered motor control
LED lighting & TV backlight
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
[1]
Min
-
-
-
Typ
-
-
-
Max
80
100
238
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
6.3
8.5
Dynamic characteristics
Q
GD
I
D
= 25 A; V
DS
= 64 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
-
17.1
-
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