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TGF3020-SM

Description
5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor
File Size3MB,23 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
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TGF3020-SM Overview

5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor

TGF3020-SM
5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor
Applications
Telemetry
C-band radar
Communications
Test instrumentation
Wideband amplifiers
5.8GHz ISM
Product Features
Frequency: 4.0 to 6.0 GHz
Output Power (P
3dB
): 6.8 W at 5 GHz
Linear Gain: 12.7 dB at 5 GHz
Typical PAE
3dB
: 59.6% at 5 GHz
Operating Voltage: 32 V
Low thermal resistance package
CW and Pulse capable
3 x 3 mm package
Functional Block Diagram
General Description
The TriQuint TGF3020-SM is a 5W (P
3dB
), 50Ω-input
matched discrete GaN on SiC HEMT which operates
from 4.0 to 6.0 GHz. The integrated input matching
network enables wideband gain and power performance,
while the output can be matched on board to optimize
power and efficiency for any region within the band.
The device is housed in an industry-standard 3 x 3 mm
surface mount QFN package.
Lead-free and ROHS compliant
Pin Configuration
Pin No.
10 - 11
2-3
Back side
Label
V
D
/ RF OUT
V
G
/ RF IN
Source
Ordering Information
Evaluation boards are available upon request.
Part
TGF3020-SM
TGF3020-SM-
EVB1
TGF3020-SM-
EVB2
ECCN
EAR99
EAR99
EAR99
Description
QFN Packaged Part
5.3 – 5.9 GHz EVB
4 – 6 GHz EVB
Datasheet: Rev A 09-26-14
© 2014 TriQuint
- 1 of 23 -
Disclaimer: Subject to change without notice
www.triquint.com
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Index Files: 866  1929  1028  47  1297  18  39  21  1  27 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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