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MBRA60060CT

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 300A, 60V V(RRM), Silicon, MODULE-2
CategoryDiscrete semiconductor    diode   
File Size808KB,2 Pages
ManufacturerDaco Semiconductor Co., Ltd.
Download Datasheet Parametric View All

MBRA60060CT Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 300A, 60V V(RRM), Silicon, MODULE-2

MBRA60060CT Parametric

Parameter NameAttribute value
MakerDaco Semiconductor Co., Ltd.
package instructionR-XUFM-X2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current4000 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current300 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage60 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER

MBRA60060CT Preview

DACO SEMICONDUCTOR CO.,LTD
.
Features
High surge Capability
Types Up to 100V V
RRM
MBRA60020CT(R)
THRU
MBRA600100CT(R)
SCHOTTKY DIODE MODULE TYPES 600A
600Amp Recti er
20-100 Volts
HEAVY TWIN TOWER
A
R
Maximum Ratings
Operating Temperature: -55℃ to+150
Storage Temperature: -55℃ to+150
Q
N
G
W
B
Part Number
MBRA60020CT(R)
MBRA60030CT(R)
MBRA60035CT(R)
MBRA60040CT(R)
MBRA60045CT(R)
MBRA60060CT(R)
MBRA60080CT(R)
MBRA600100CT(R)
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum
RMS Voltage
14V
21V
25V
28V
32V
42V
56V
70V
Maximum DC
Blocking
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
U
F
U
C
V
E
LUG
Teminal
Anode 1
LUG
Teminal
Anode 2
LUG
LUG
Teminal
Teminal
Cathode 1 Cathode 2
3
Baseplate
Common Cathode
3
Baseplate
R=Common Anode
Electrcal Characteristics @ 25℃ Unless Otherwise Specified
Average Forward
Current
(Per pkg)
Peak Forward Surge
(Per leg)
Current
Maximum
(Per leg)
20V~45V
Instantaneous
50V~60V
Forward Voltage
80V~100V
Maximum
NOTE (1)
Instantaneous
Reverse Current At
Rated DC Blocking
(Per leg)
Voltage
I
F(AV)
I
FSM
V
F
600A
4000A
0.70V
0.75V
0.84V
DIM
A
B
C
E
F
G
N
Q
R
Inches
Min
-----
1.06
-----
0.134
0.520
1.49
Max
3.64
1.067
0.740
0.14
0.527
BSC
1/4-20 UNC FULL
0.275
3.150
0.512
0.449
0.180
0.290
BSC
-----
0.472
0.195
6.99
80.01
13.0
11.4
4.57
Min
-----
26.9
-----
3.4
13.2
38.0
Millimeters
Max
92.3
27.1
18.8
3.55
13.4
BSC
T
C
=100
8.3ms , half sine
I
FM=300A;Tj=25
I
R
1 mA
10 mA
50 mA
0.28
/W
T
J
= 25
T
J
=100
T
J
=150
7.37
BSC
-----
12.0
4.95
Maximum Thermal
Resistance Junction
To Case
(Per leg)
R jc
U
V
W
NOTE :
(1)
Pulse Test: Pulse Width 300
μsec
,Duty<2%
WWW.dacosemi.com.tw
-1-
DACO SEMICONDUCTOR CO.,LTD.
MBRA60020CT(R)
THRU
MBRA600100CT(R)
Figure.1-Typical Forward Characteristics
360
Average Forward Recti ed Current-Ampere
Figure.2-Forward Derating Curve
1000
T
J
= 25
300
Instantaneous Forward Current-Ampere
Amp Per lge
600
400
300
200
100
60
MBRA60020CT
MBRA60030CT
MBRA60035CT
MBRA60040CT
MBRA60045CT
240
Per lge
Amp
180
120
60
MBRA60060CT
Single Phase,Half Wave
-60Hz Res istive or Inductive Load
0
0
30
60
90
Case Temperature -
120
150
180
10
6.0
4.0
2.0
1.0
MBRA60080CT
MBRA600100CT
0
0.2
0.4
Vo lts
0.6
0.8
1.0
1.2
100
60
40
20
10
6
4
2
Figure.4-Typical Reverse Characteristics
Instantaneous Forward Voltage -Volts
T j =150 C
m
A
T j =100 C
6000
Figupre.3-Peak Forward Surge Current
8.3ms Single Half
Sine Wave
JEDEC method T
J
=25
Instantaneous Reverse Leakage Current-
Peak Forward Surge Current-Ampere
m
A
5000
4000
3000
2000
1000
0
1
0.6
0.4
0.2
0.1
Amp
Per lge
T
J
=25
.06
.04
.02
1
2
4
6
8 10
20
40
60 80 100
.01
Cycles
Number Of Cycles At60Hz -Cycles
20
30
40
60
70
80
Volts
Revers Voltage - Volts(%)
50
90
100
www.dacosemi.com .tw
-2-

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