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FBI20K1B1

Description
Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    diode   
File Size151KB,2 Pages
ManufacturerFagor Electrónica
Environmental Compliance
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FBI20K1B1 Overview

Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, PLASTIC PACKAGE-4

FBI20K1B1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFagor Electrónica
package instructionPLASTIC PACKAGE-4
Contacts4
Reach Compliance Codeunknow
Minimum breakdown voltage800 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSFM-T4
JESD-609 codee3
Maximum non-repetitive peak forward current250 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

FBI20K1B1 Preview

FBI20G1B1.......FBI20M1B1
20.0 Amp. Glass Passivated Bridge Rectifiers
Dimensions in mm.
Plastic
Case
4.8
4.4
3.8
3.4
3.4
3.1
20.3
19.7
4.8
Voltage
400 V to 1000 V
Current
20 A
C 3x45°
30.3
29.7
11.2
10.8
2.9
2.5
2.7
2.3
2.4
2.0
1.1
0.9
10.2
9.8
7.7
7.3
7.7
7.3
4.2
3.8
18
17
• Glass passivated chip junction
• Ideal for printed circuit board
• Reliable low cost construction
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
• Surge overload rating to 250 amperes peak
• High case dielectric strength of 2000 V
RMS
• Isolated voltage from case to lead over
2500 volts
MECHANICAL DATA
• Case: Molded plastic
• Terminals: Leads solderable
per MIL-STD-750, Method 2026
• Weight: 0.3 ounce, 8 grams
• Mounting torque: 8.17 in. Ibs. max.
0.7
0.6
Maximum Ratings and Electrical Characteristics at 25 ºC
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
j
T
stg
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified Current
See Fig.
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC Method)
Operating Temperature Range
Storage Temperature Range
FBI20
G1B1
400
280
400
FBI20
J1B1
600
420
600
20.0 A
250 A
-55 to +150 °C
-55 to +150 °C
FBI20
K1B1
800
560
800
FBI20
M1B1
1000
700
1000
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
th (j-c)
Maximum Instantaneous Forward Voltage
@ = 10 A
@ = 20 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
= 25 °C
@ T
A
=125°C
1.0 V
1.1 V
10 µA
500 µA
0.8 °C/W
Typical Thermal Resistance (Note)
Note: Thermal Resistance from Junction to Case with Device Mounted on 300mm x 300mm x 1.6mm
Cu Plate Heatsink.
Sep - 08
FBI20G1B1.......FBI20M1B1
Rating And Charasterictic Curves
TYPICAL FORWARD CHARACTERISTICS
PER BRIDGE ELEMENT
MAXIMUM FORWARD CURRENT DERATING
CURVE
I
F
, instantaneous forward current (A)
I
F(AV)
, average forward current (A)
1000
100
25
20
15
10
5
0
20
10
1
0.1
0.6
0.8
V
F
, forward voltage (V)
1.0
1.2
1.4
1.6
1.8
2.0
40
60
80
Case temperature (°C)
100 120 140 160 180
I
FSM
, peak forward surge current (A)
MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER BRIDGE ELEMENT
TYPICAL JUNCTION CAPACITANCE
Cj, junction capacitance (pF)
400
300
200
100
90
80
60
40
20
1
2
4
6
10
20
40 60 100
600
500
400
300
200
100
0
0.1
0.5 1
2
5
10 20
50 100 200
800
T
j
= 25 °C
Number of cycles at 60Hz
V
R
, reverse voltage (V)
I
R
, Instantaneous reverse current (µA)
TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
10
T
j
= 125 °C
1
T
j
= 25 °C
0.1
0.01
0
Percent of rated peak reverse voltage (%)
20
40
60
80
100
120
140
Sep - 08

FBI20K1B1 Related Products

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Description Bridge Rectifier Diode, 1 Phase, 20A, 800V V(RRM), Silicon, PLASTIC PACKAGE-4 Bridge Rectifier Diode, 1 Phase, 20A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-4 Bridge Rectifier Diode, 1 Phase, 20A, 600V V(RRM), Silicon, PLASTIC PACKAGE-4 Bridge Rectifier Diode, 1 Phase, 20A, 400V V(RRM), Silicon, PLASTIC PACKAGE-4
Is it Rohs certified? conform to conform to conform to conform to
Maker Fagor Electrónica Fagor Electrónica Fagor Electrónica Fagor Electrónica
package instruction PLASTIC PACKAGE-4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Contacts 4 4 4 4
Reach Compliance Code unknow unknown unknown unknown
Minimum breakdown voltage 800 V 1000 V 600 V 400 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
JESD-609 code e3 e3 e3 e3
Maximum non-repetitive peak forward current 250 A 250 A 250 A 250 A
Number of components 4 4 4 4
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 20 A 20 A 20 A 20 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 1000 V 600 V 400 V
surface mount NO NO NO NO
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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