DS 35
DSA 35
DSI 35
DSAI 35
Rectifier Diode
Avalanche Diode
V
RRM
= 1200-1800 V
I
F(RMS)
= 80 A
I
F(AV)M
= 49 A
V
RSM
V
1300
1300
1700
1900
V
(BR)min
①
V
RRM
V
-
1300
1750
1950
V
1200
1200
1600
1800
Anode
on stud
DS 35-12A
DSA 35-12A
DSA 35-16A
DSA 35-18A
Cathode
on stud
DSI 35-12A
DSAI 35-12A
DSAI 35-16A
DSAI 35-18A
DO-203 AB
C
A
DS
DSA
A
C
DSI
DSAI
1/4-28UNF
A = Anode
C = Cathode
①
Only for Avalanche Diodes
Symbol
I
F(RMS)
I
F(AVM)
P
RSM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
case
= 100°C; 180° sine
DSA(I) types, T
VJ
= T
VJM
, t
p
= 10
µs
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
80
49
11
650
690
600
640
2100
2000
1800
1700
-40...+180
180
-40...+180
A
A
kW
A
A
A
A
A
2
s
A
2
s
As
A
2
s
°C
°C
°C
Nm
lb.in.
g
2
●
Features
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
●
Applications
High power rectifiers
Field supply for DC motors
Power supplies
●
●
●
I
2
t
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
T
VJM
T
stg
M
d
Weight
Mounting torque
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
●
●
4.5-5.5
40-49
15
Dimensions in mm (1 mm = 0.0394")
Symbol
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
I
F
= 150 A; T
VJ
= 25°C
Characteristic Values
≤
≤
4
1.55
0.85
4.5
1.05
1.25
4.05
3.9
100
mA
V
V
mΩ
K/W
K/W
mm
mm
m/s
2
For power-loss calculations only
T
VJ
= T
VJM
DC current
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
20170323a
© 2017 IXYS All rights reserved
1-1
DS 35
DSA 35
50Hz, 80% V
RRM
00001
0001
052
DSI 35
DSAI 35
V
R
= 0 V
typ.
lim.
Fig. 1
Forward characteristics
Fig. 2
Surge overload current
I
FSM
: crest value, t: duration
Fig. 3
I
2
t versus time (1-10 ms)
2.3 K/W
ase
Fig. 4
0.2
Power dissipation versus forward current and ambient temperature
Fig. 5
Max. forward current at case
temperature 180° sine
R
thJH
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJH
(K/W)
1.25
1.37
1.47
1.74
2.08
Constants for Z
thJH
calculation:
4.0
i
1
2
3
4
R
thi
(K/W)
0.10
0.25
0.70
0.20
t
i
(s)
0.0012
0.1181
0.6540
2.0
20170323a
Fig. 6
Transient thermal impedance junction to heatsink
© 2017 IXYS All rights reserved
002 C° 061
c
T
021
08
04
0
0
01
02
DC
180° sin
120°
60°
30°
03
3.9 K/W
04
1.9 K/W
M)VA(F
I
1.5 K/W
05
R
thJA
:
t
s8
019m 7 6 5 4
3
2
1
06
0001
0002
A
2
002 C° 051
01
0
01
s
s
t
1-
t
01
bma
T
1
01
001
2-
01
05
0
01
3-
01
0
001
002
003
004
005
T
VJ
= 180°C
T
VJ
= 25°C
001
T
VJ
= 45°C
T
VJ
= 180°C
0004
0006
t
2
I
s 00
0
2
A 8
006
007
008
0
0
MSF
0
0A9
I
A 08
V 0.2
1-
M)VA(F
01
I
06
F
V
5.1
04
2-
01
0.1
02
3-
5.0
0
01
0.0
0
W/K
0
05
02
8.0
04
2.1
002
051
06
6.1
08
001
W
HJht
F
A
P
F
Z
I
T
VJ
= 45°C
T
VJ
= 180°C
2-1
Microcontroller MCU
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