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50HQ045

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size267KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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50HQ045 Overview

Rectifier Diode,

50HQ045 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
Reach Compliance Codeunknow
50HQ035
50HQ040
50HQ045
Technical Data
Data Sheet N2259, Rev. -
50HQ035/50HQ040/50HQ045
SCHOTTKY RECTIFIER
Features
150
C
T
J
operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DO-5
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=101°C,
rectangular wave form
10 ms, Half Sine pulse, T
C
= 25
C
35(50HQ035)
40(50HQ040)
45(50HQ045)
60
1150
Max.
Units
V
A
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Symbol
V
F1
V
F2
Reverse Current*
I
R1
I
R2
Junction Capacitance
Voltage Rate of Change
* Pulse width < 300 µs, duty cycle < 2%
C
T
dv/dt
@ 60A, Pulse, T
J
= 25
C
@ 120A, Pulse, T
J
= 25
C
@ 60A, Pulse, T
J
= 125
C
@ 120A, Pulse, T
J
= 125
C
@V
R
= rated V
R
T
J
= 25
C
@V
R
= rated V
R
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz
-
Condition
Typ.
-
-
-
-
-
-
-
-
0.60
0.78
0.53
0.69
5
200
Max.
Units
V
V
mA
mA
pF
V/s
2600
10,000
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

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