SMD Type
PNP Transistors
2SB1124
■
Features
●
Low collector-to-emitter saturation voltage.
●
Large current capacity and wide ASO.
●
Fast switching speed.
●
Complementary to 2SD1624
0.42 0.1
0.46 0.1
Transistors
1.70
0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector current -Pulse
Collector Power Dissipation
(Note.1)
Junction Temperature
Storage Temperature range
Note.1: Mounted on ceramic board (250mm
2
×0.8mm)
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-ON Time
Storage Time
Fall Time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
t
on
t
stg
t
f
C
ob
f
T
2SB1124-S
140-280
BG S*
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= -10V, I
C
= -50mA
2SB1124-T
200-400
BG T*
2SB1124-U
280-560
BG U*
See specified Test Circuit.
Test Conditions
Ic= -100 μA， I
E
=0
Ic= -1 mA， R
BE
=∞
I
E
= -100μA， I
C
=0
V
CB
= -50V , I
E
=0
V
EB
= -5V , I
C
=0
I
C
=-2 A, I
B
=-100mA
I
C
=-2 A, I
B
=-100mA
V
CE
= -2V, I
C
= -100 mA
V
CE
= -2V, I
C
= -3 A
100
35
70
450
35
39
150
pF
MHz
ns
-0.35
-0.94
Min
-60
-50
-6
-1
-1
-0.7
-1.2
560
uA
V
V
Typ
Max
Unit
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-60
-50
-6
-3
-6
0.5
1.5
150
-55 to 150
A
W
V
Unit
℃
■
Electrical Characteristics Ta = 25℃
■
Classification of h
fe(1)
Type
Range
Marking
2SB1124-R
100-200
BG R*
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