V826664K24SAIG-B1 datasheet, PDF

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V826664K24SAIG-B1: DescriptionDDR DRAM Module, 64MX64, 0.75ns, CMOS, DIMM-184; Categorystorage storage; File Size203KB，14 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V826664K24SAIG-B1 Overview

DDR DRAM Module, 64MX64, 0.75ns, CMOS, DIMM-184

V826664K24SAIG-B1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ProMOS Technologies Inc
Parts packaging code	DIMM
package instruction	DIMM,
Contacts	184
Reach Compliance Code	compli
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.75 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-XDMA-N184
JESD-609 code	e4
memory density	4294967296 bi
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	184
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX64
Package body material	UNSPECIFIED
encapsulated code	DIMM
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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V826664K24SA

64M x 64 HIGH PERFORMANCE

UNBUFFERED DDR SDRAM MODULE

Features

■

184 Pin Unbuffered 67,108,864 x 64 bit

Organization DDR SDRAM Modules

■

Utilizes High Performance 32M x 8 DDR

SDRAM in TSOPII-66 Packages

■

Single +2.5V (± 0.2V) Power Supply

■

Single +2.6V (± 0.1V) Power Supply for DDR400

■

Programmable CAS Latency, Burst Length, and

Wrap Sequence (Sequential & Interleave)

■

Auto Refresh (CBR) and Self Refresh

■

All Inputs, Outputs are SSTL-2 Compatible

■

8192 Refresh Cycles every 64 ms

■

Serial Presence Detect (SPD)

■

DDR SDRAM Performance

Description

The V826664K24SA memory module is

organized 67,108,864 x 64 bits in a 184 pin memory

module. The 64M x 64 memory module uses 16

ProMOS 32M x 8 DDR SDRAM. The x64 modules

are ideal for use in high performance computer

systems where increased memory density and fast

access times are required.

Module Speed

Clock Frequency (max.)

Clock Cycle Time CAS Latency = 2

Clock Cycle Time CAS Latency = 2.5

Clock Cycle Time CAS Latency = 3

RCD

tRCD parameter

tRP parameter

200

(PC400A)

200

(PC400B)

166

(PC333)

143

(PC266A)

133

(PC266B)

Units

MHz

CLK

7.5

V826664K24SA Rev. 1.2 July 2004

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