1M238B-3M datasheet, PDF - EEWORLD Datasheet

1M238B-3M: DescriptionVariable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 12V, Silicon; CategoryDiscrete semiconductor diode; File Size60KB，1 Pages; ManufacturerMsi Electronics Inc

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1M238B-3M Overview

Variable Capacitance Diode, High Frequency to Ultra High Frequency, 33pF C(T), 12V, Silicon

Parameter Name	Attribute value
Maker	Msi Electronics Inc
package instruction	R-PDSO-N2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	3% MATCHED SET OF THREE DIODES
Minimum breakdown voltage	12 V
Configuration	SEPARATE, 3 ELEMENTS
Diode Capacitance Tolerance	5%
Minimum diode capacitance ratio	7
Nominal diode capacitance	33 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	R-PDSO-N2
Number of components	3
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
minimum quality factor	125
Maximum reverse current	0.01 µA
Reverse test voltage	10 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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