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PRHMB100B12_15

Description
IGBT
File Size187KB,3 Pages
ManufacturerNI
Websitehttps://www.ni.com
Download Datasheet View All

PRHMB100B12_15 Overview

IGBT

IGBT
M½½½½½
C½½½½½½
□ 回 路 図 :
CIRCUIT
100 A,
1200V
PRHMB100B12
□ 外 ½ 寸 法 図 :
OUTLINE DRAWING
12
94
80
± 0 .2 5
11 12 11
2
12
3
7
6
2-Ø 5.5
4
12
(C2E1)
1
(E2)
2
(C1)
3
7(G2)
6(E2)
3-M5
1
23
23
17
16
7
16
7
16
4-fasten tab
#110 t= 0.5
8
30
+1 .0
- 0 .5
LABEL
6
23
35
Dimension:[mm½
□ 最 大 定 格 :
MAXIMUM
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コ レ ク タ 電 流
Collector Current
コ レ ク タ 損 失
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
圧(Terminal to Base AC,1½inute)
Isolation Voltage
Module Base to Heatsink
締 め 付 け ト ル ク
Mounting Torque
Busbar to Main Terminal
□ 電 気 的 特 性
DC
1½½
RATINGS
(T
=25℃)
S½½½½½
CES
GES
CP
½
½½½
ISO
½½½
R½½½½ V½½½½
1,200
±20
100
200
500
-40½+150
-40½+125
2,500
2(20.4)
U½½½
(RMS)
N・½
(kgf½cm)
I½½½
ELECTRICAL CHARACTERISTICS
(T
=25℃)
S½½½½½
CES
GES
CE(½½½)
GE(½½)
½½½
上 昇 時 間
ターンオン時間
下 降 時 間
ターンオフ時間
Rise
Turn-on
Fall
Turn-off
Time
Time
Time
Time
½
½
½
½½
½
½
½
½½½
T½½½ C½½½½½½½½
CE
= 1200V,V
GE
= 0V
GE
= ±20V,V
CE
= 0V
= 100A,V
GE
= 15V
CE
= 5V,I
= 100mA
CE
= 10V,V
GE
= 0V,½= 1MH
CC
= 600V
L
= 6Ω
G
= 10Ω
GE
= ±15V
M½½.
4.0
T½½.
1.9
8,300
0.25
0.40
0.25
0.80
M½½.
2.0
1.0
2.4
8.0
0.45
0.70
0.35
1.10
U½½½
½A
μA
½F
C½½½½½½½½½½½½½
コ レ ク タ 遮 断 電 流
Collector-Emitter Cut-Off Current
ゲ ー ト 漏 れ 電 流
Gate-Emitter Leakage Current
コレクタ・エミッタ間½和電圧
Collector-Emitter Saturation Voltage
ゲ ー ト し き い 値 電 圧
Gate-Emitter Threshold Voltage
Input Capacitance
スイッチング時間
Switching Time
μ½
□フリーホイーリングダイオードの 特 性:
FREE
I½½½
Forward Current
C½½½½½½½½½½½½½
Peak Forward Voltage
逆 回 復 時 間
Reverse Recovery Time
□ 熱
特 性
WHEELING DIODE RATINGS & CHARACTERISTICS
(T
=25℃)
S½½½½½
FM
S½½½½½
½
½½
R½½½½ V½½½½
100
200
T½½½ C½½½½½½½½
= 100A,V
GE
= 0V
= 100A,V
GE
= -10V
½i/½t= 200A/μs
M½½.
T½½.
1.9
0.2
M½½.
2.4
0.3
U½½½
DC
1½½
U½½½
μ½
THERMAL CHARACTERISTICS
S½½½½½
Rth(j-c)
T½½½ C½½½½½½½½
Junction to Case
M½½.
T½½.
M½½.
0.24
0.42
U½½½
℃/W
C½½½½½½½½½½½½½
IGBT
Thermal Impedance
Diode
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