1N4788B datasheet, PDF - EEWORLD Datasheet

1N4788B: DescriptionVariable Capacitance Diode, 10pF C(T), 25V, Silicon, DO-7; CategoryDiscrete semiconductor diode; File Size156KB，1 Pages; ManufacturerInternational Semiconductor Inc

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1N4788B Overview

Variable Capacitance Diode, 10pF C(T), 25V, Silicon, DO-7

Parameter Name	Attribute value
Maker	International Semiconductor Inc
package instruction	O-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	HIGH Q, LOW LEAKAGE
Minimum breakdown voltage	25 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	5%
Minimum diode capacitance ratio	2.46
Nominal diode capacitance	10 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JEDEC-95 code	DO-7
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.4 W
Certification status	Not Qualified
minimum quality factor	15
Maximum repetitive peak reverse voltage	25 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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