FU11EL-N datasheet, PDF - EEWORLD Datasheet

FU11EL-N: DescriptionLaser Diode, 1330nm; CategoryLED optoelectronic/LED photoelectric; File Size142KB，3 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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FU11EL-N Overview

Laser Diode, 1330nm

Parameter Name	Attribute value
Maker	Mitsubishi
Reach Compliance Code	unknow
Maximum forward voltage	2 V
Installation features	THROUGH HOLE MOUNT
Maximum operating temperature	65 °C
Minimum operating temperature	-20 °C
Optoelectronic device types	LASER DIODE
peak wavelength	1330 nm
Semiconductor material	InGaAs
Spectral bandwidth	9e-8 m
surface mount	NO
Base Number Matches	1

	FU11EL-N	FU31EL
Description	Laser Diode, 1330nm	Laser Diode, 1330nm
Reach Compliance Code	unknow	unknow
Maximum forward voltage	2 V	2 V
Installation features	THROUGH HOLE MOUNT	THROUGH HOLE MOUNT
Maximum operating temperature	65 °C	65 °C
Minimum operating temperature	-20 °C	-20 °C
Optoelectronic device types	LASER DIODE	LASER DIODE
peak wavelength	1330 nm	1330 nm
Semiconductor material	InGaAs	InGaAs
Spectral bandwidth	9e-8 m	9e-8 m
surface mount	NO	NO
Base Number Matches	1	1

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