TIP34B datasheet, PDF - EEWORLD Datasheet

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TIP34B: Description10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218; CategoryDiscrete semiconductor The transistor; File Size60KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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TIP34B Overview

10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218

TIP34B Parametric

Parameter Name	Attribute value
Parts packaging code	TO-218AC
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Manufacturer packaging code	CASE 340D-02
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-218AC
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	PNP
Maximum power dissipation(Abs)	80 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz
Base Number Matches	1

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by TIP33B/D

Complementary Silicon

High-Power Transistors

. . . for general–purpose power amplifier and switching applications.

•

10 A Collector Current

Low Leakage Current — ICEO = 0.7 mA @ 60 V

Excellent dc Gain — hFE = 40 Typ @ 3.0 A

High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz

TIP33B*

TIP33C

PNP

TIP34B*

TIP34C

*Motorola Preferred Device

NPN

MAXIMUM RATINGS

Rating

Symbol

VCEO

VCB

VEB

TIP33B

TIP34B

80 V

TIP33C

TIP34C

100 V

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

100 VOLTS

80 WATTS

hFE , DC CURRENT GAIN

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5.0

Collector Current — Continuous

Peak (1)

Base Current — Continuous

Total Power Dissipation

@ TC = 25

Derate above 25

3.0

0.64

Watts

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 150

THERMAL CHARACTERISTICS

Characteristic

CASE 340D–02

TO–218AC

Symbol

θJC

θJA

Max

Unit

Thermal Resistance, Junction to Case

1.56

35.7

C/W

Junction–To–Free–Air Thermal Resistance

(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle

10%.

500

200

100

5.0

0.1

VCE = 4.0 V

TJ = 25°C

NPN

PNP

1.0

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1996

Motorola Bipolar Power Transistor Device Data

TIP33B TIP33C TIP34B TIP34C

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE / Locations Not Listed:

Motorola Literature Distribution;

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454

MFAX:

RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609

INTERNET:

http://Design–NET.com

JAPAN:

Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,

3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315

ASIA/PACIFIC:

Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

◊

Motorola Bipolar Power Transistor Device Data

TIP33B/D

*TIP33B/D*

TIP34B Related Products

	TIP34B	TIP34C	TIP33B
Description	10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218	10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218	10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218
Parts packaging code	TO-218AC	TO-218AC	TO-218AC
package instruction	FLANGE MOUNT, R-PSFM-T3	CASE 340D-02, 3 PIN	CASE 340D-02, 3 PIN
Contacts	3	3	3
Manufacturer packaging code	CASE 340D-02	CASE 340D-02	CASE 340D-02
Reach Compliance Code	unknow	_compli	unknown
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	10 A	10 A	10 A
Collector-emitter maximum voltage	80 V	100 V	80 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20
JEDEC-95 code	TO-218AC	TO-218AC	TO-218AC
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	PNP	PNP	NPN
Maximum power dissipation(Abs)	80 W	80 W	80 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	3 MHz	3 MHz	3 MHz
Is it Rohs certified?	-	incompatible	incompatible
Maker	-	ON Semiconductor	ON Semiconductor
JESD-609 code	-	e0	e0
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED

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