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10PT10F

Description
Stansard SCRs, 10A
File Size142KB,5 Pages
ManufacturerNell
Websitehttps://www.nellsemi.com
Download Datasheet View All

10PT10F Overview

Stansard SCRs, 10A

SEMICONDUCTOR
RoHS
10PT Series
RoHS
Stansard SCRs, 10A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
10
600 to 1000
15
Unit
A
1
2
3
3
2
2
V
mA
1
2
TO-251
(I-PAK)
(10PTxxF)
TO-252
(D-PAK)
(10PTxxG)
DESCRIPTION
The 10PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
designed for power supply up to 400Hz on resistive or
inductive load.
1
2
3
2
1
2
3
TO-220AB
(Non-lnsulated)
(10PTxxA)
2
(A2)
TO-220AB
(lnsulated)
(10PTxxAI)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25
°
C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
T(AV)
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
F = 60 Hz
T
p
= 20 µs
T
p
=20
µs
T
j
=125ºC
T
j
= 125ºC
T
j
= 125ºC
T
j
= 125ºC
Tc=100°C
Tc=90°C
Tc=100°C
Tc=90°C
t = 20 ms
t = 16.7 ms
6.4
100
105
50
50
4
10
1
600 to 1000
- 40 to + 150
ºC
- 40 to + 125
A
A
2
s
A/µs
A
W
W
V
A
10
VALUE
UNIT
A
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
www.nellsemi.com
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