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EDI88512CA-20RJBG

Description
Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, REVOLUTIONARY, SOJ-36
Categorystorage    storage   
File Size798KB,9 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
Download Datasheet Parametric View All

EDI88512CA-20RJBG Overview

Standard SRAM, 512KX8, 20ns, CMOS, PDSO36, ROHS COMPLIANT, PLASTIC, REVOLUTIONARY, SOJ-36

EDI88512CA-20RJBG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeSOJ
package instructionSOJ,
Contacts36
Reach Compliance Codecompli
ECCN code3A001.A.2.C
Maximum access time20 ns
JESD-30 codeR-PDSO-J36
length23.495 mm
memory density4194304 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals36
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize512KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height3.7592 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
EDI88512CA-XMXG
WPS512K8X-XRJXG
512Kx8 Plastic Monolithic SRAM CMOS
FEATURES

512Kx8 bit CMOS Static

Random Access Memory
• Access Times of 17, 20, 25ns
• Data Retention Function (LPA version)
• Extended Temperature Testing
• Data Retention Functionality Testing

36 lead JEDEC Approved Revolutionary Pinout
• Plastic SOJ (Package 319)

Single +5V (±10%) Supply Operation

RoHS compliant
WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to
capitalize on the cost advantage of using a plastic component while
not sacrificing all of the reliability available in a full military device.
Extended temperature testing is performed with the test patterns
developed for use on WEDC’s fully compliant 512Kx8 SRAMs.
WEDC fully characterizes devices to determine the proper test
patterns for testing at temperature extremes. This is critical because
the operating characteristics of device change when it is operated
beyond the commercial guarantee a device that operates reliably
in the field at temperature extremes. Users of WEDC’s ruggedized
plastic benefit from WEDC’s extensive experience in characterizing
SRAMs for use in military systems.
WEDC ensures Low Power devices will retain data in Data
Retention mode by characterizing the devices to determine the
appropriate test conditions. This is crucial for systems operating
at -40°C or below and using dense memories such as 512Kx8s.
WEDC’s ruggedized plastic SOJ is footprint compatible with
WEDC’s full military ceramic 36 pin SOJ.
FIGURE 1 – PIN CONFIGURATION
TOP VIEW
PIN Description
I/O
0-7
A
0-18
WE#
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power (+5V ±10%)
Ground
A0
A1
A2
A3
A4
CS#
I/O0
I/O1
V
CC
V
SS
I/O2
I/O3
WE#
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36pin
Revolutionary
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A18
A17
A16
A15
OE#
I/O7
I/O6
V
SS
V
CC
I/O5
I/O4
A14
A13
A12
A11
A10
NC
CS#
OE#
V
CC
V
SS
NC
Not Connected
BLOCK DIAGRAM
Memory Array
A
Ø-18
Address
Buffer
Address
Decoder
I/O
Circuits
I/O
Ø-7
WE#
CS#
OE#
Microsemi Corporation reserves the right to change products or specifications without notice.
February 2011
Rev. 10
© 2011 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
www.microsemi.com
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