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K9F1G08Q0M

Description
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
File Size724KB,40 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K9F1G08Q0M Overview

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit
NAND Flash Memory
Revision History
Revision No
0.0
0.1
History
1. Initial issue
1. Iol(R/B) of 1.8V is changed.
- min. value : 7mA --> 3mA
- Typ. value : 8mA --> 4mA
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. A recovery time of minimum 1µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
Draft Date
July. 5. 2001
Nov. 5. 2001
Remark
Advance
Dec. 4. 2001
0.2
1. ALE status fault in ’
Random data out in a page’ timing diagram(page 19)
is fixed.
1. tAR1, tAR2 are merged to tAR.(Page11)
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns
(After revision) min. tAR = 10ns
2. min. tCLR is changed from 50ns to 10ns.(Page11)
3. min. tREA is changed from 35ns to 30ns.(Page11)
4. min. tWC is changed from 50ns to 45ns.(Page11)
5. tRHZ is devided into tRHZ and tOH.(Page11)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
6. tCHZ is devided into tCHZ and tOH.(Page11)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
1. The min. Vcc value 1.8V devices is changed.
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F1G08U0M-FCB0,FIB0
K9F1G08Q0M-PCB0,PIB0
K9F1G08U0M-PCB0,PIB0
K9F1G16U0M-PCB0,PIB0
K9F1G16Q0M-PCB0,PIB0
Apr. 25. 2002
0.3
0.4
Nov. 22.2002
0.5
Mar. 6.2003
0.6
Mar. 13.2003
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1

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Description 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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