K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit
NAND Flash Memory
Revision History
Revision No
0.0
0.1
History
1. Initial issue
1. Iol(R/B) of 1.8V is changed.
- min. value : 7mA --> 3mA
- Typ. value : 8mA --> 4mA
2. AC parameter is changed.
tRP(min.) : 30ns --> 25ns
3. A recovery time of minimum 1µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
---> A recovery time of minimum 10µs is required before internal circuit gets
ready for any command sequences as shown in Figure 17.
Draft Date
July. 5. 2001
Nov. 5. 2001
Remark
Advance
Dec. 4. 2001
0.2
1. ALE status fault in ’
Random data out in a page’ timing diagram(page 19)
is fixed.
1. tAR1, tAR2 are merged to tAR.(Page11)
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns
(After revision) min. tAR = 10ns
2. min. tCLR is changed from 50ns to 10ns.(Page11)
3. min. tREA is changed from 35ns to 30ns.(Page11)
4. min. tWC is changed from 50ns to 45ns.(Page11)
5. tRHZ is devided into tRHZ and tOH.(Page11)
- tRHZ : RE High to Output Hi-Z
- tOH : RE High to Output Hold
6. tCHZ is devided into tCHZ and tOH.(Page11)
- tCHZ : CE High to Output Hi-Z
- tOH : CE High to Output Hold
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
1. The min. Vcc value 1.8V devices is changed.
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F1G08U0M-FCB0,FIB0
K9F1G08Q0M-PCB0,PIB0
K9F1G08U0M-PCB0,PIB0
K9F1G16U0M-PCB0,PIB0
K9F1G16Q0M-PCB0,PIB0
Apr. 25. 2002
0.3
0.4
Nov. 22.2002
0.5
Mar. 6.2003
0.6
Mar. 13.2003
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
1
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
Document Title
128M x 8 Bit / 64M x 16 Bit
NAND Flash Memory
Revision History
Revision No
0.7
History
Errata is added.(Front Page)-K9F1GXXQ0M
Specification
Relaxed value
tWC tWP tWH tRC tREH tRP tREA tCEA
45 25 15 50 15 25 30
45
80 60 20 80 20 60 60
75
Draft Date
Mar.17. 2003
Remark
0.8
1. The 3rd Byte ID after 90h ID read command is don’ cared.
t
The 5th Byte ID after 90h ID read command is deleted.
1. 2.65V device is added.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
AC parameters are changed-K9F1GXXQ0M
tWC tWP tWH tRC tREH tRP tREA tCEA
Before 45 25 15 50 15 25 30
45
After
80 60 20 80 20 60 60
75
Added Addressing method for program operation
1. Add the Protrusion/Burr value in WSOP1 PKG Diagram.
1. PKG(TSOP1, WSOP1) Dimension Change
Apr. 9. 2003
0.9
Jul. 2. 2003
1.0
Aug. 5. 2003
1.1
1.2
1.3
Jan. 27. 2004
Apr. 23. 2004
May. 24. 2004
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
2
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
FLASH MEMORY
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F1G08Q0M-Y,P
K9F1G16Q0M-Y,P
K9F1G08D0M-Y,P
K9F1G16D0M-Y,P
K9F1G08U0M-Y,P
K9F1G16U0M-Y,P
K9F1G08U0M-V,F
2.7 ~ 3.6V
2.4 ~ 2.9V
Vcc Range
1.70 ~ 1.95V
Organization
X8
X16
X8
X16
X8
X16
X8
WSOP1
TSOP1
TSOP1
PKG Type
TSOP1
FEATURES
•
Voltage Supply
-1.8V device(K9F1GXXQ0M): 1.70V~1.95V
- 2.65V device(K9F1GXXD0M) : 2.4~2.9V
-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
•
Organization
- Memory Cell Array
-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit
-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit
- Data Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
•
Automatic Program and Erase
- Page Program
-X8 device(K9F1G08X0M): (2K + 64)Byte
-X16 device(K9F1G16X0M): (1K + 32)Word
- Block Erase
-X8 device(K9F1G08X0M): (128K + 4K)Byte
-X16 device(K9F1G16X0M): (64K + 2K)Word
•
Page Read Operation
- Page Size
- X8 device(K9F1G08X0M): 2K-Byte
- X16 device(K9F1G16X0M) : 1K-Word
- Random Read : 25µs(Max.)
- Serial Access : 50ns(Min.)*
*K9F1GXXQ0M : 80ns
•
Fast Write Cycle Time
- Program time : 300µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
•
Command Register Operation
•
Cache Program Operation for High Performance Program
•
Power-On Auto-Read Operation
•
Intelligent Copy-Back Operation
•
Unique ID for Copyright Protection
•
Package :
- K9F1GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0M-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1GXXX0M-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1G08U0M-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1G08U0M-V,F(WSOPI ) is the same device as
K9F1G08U0M-Y,P(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-
effective solution for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112-
byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)
or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or
word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write
controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin-
ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M′s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for
large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
3
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
PIN CONFIGURATION (TSOP1)
K9F1GXXX0M-YCB0,PCB0/YIB0,PIB0
X16
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
FLASH MEMORY
X8
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
X8
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
PRE
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
X16
Vss
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
N.C
PRE
Vcc
N.C
N.C
N.C
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
48-pin TSOP1
Standard Type
12mm x 20mm
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220AF
Unit :mm/Inch
0.10
MAX
0.004
#48
( 0.25 )
0.010
12.40
0.488 MAX
#24
#25
1.00
±0.05
0.039
±0.002
0.25
0.010 TYP
18.40
±0.10
0.724
±0.004
+0.075
20.00
±0.20
0.787
±0.008
0.20
-0.03
+0.07
#1
0.008
-0.001
0.16
-0.03
+0.07
+0.003
0.50
0.0197
12.00
0.472
0.05
0.002 MIN
0.125
0.035
0~8°
0.45~0.75
0.018~0.030
( 0.50 )
0.020
4
0.005
-0.001
+0.003
1.20
0.047MAX
K9F1G08Q0M K9F1G16Q0M
K9F1G08D0M K9F1G16D0M
K9F1G08U0M K9F1G16U0M
PIN CONFIGURATION (WSOP1)
K9F1G08U0M-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
N.C
DNU
N.C
I/O7
I/O6
I/O5
I/O4
N.C
DNU
N.C
Vcc
Vss
N.C
DNU
N.C
I/O3
I/O2
I/O1
I/O0
N.C
DNU
N.C
N.C
FLASH MEMORY
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
0.70 MAX
15.40
±0.10
0.58
±0.04
#1
+0.07
-0.03
#48
+0.07
-0.03
0.16
12.40MAX
12.00
±0.10
0.50TYP
(0.50
±
0.06)
0.20
#24
#25
(0.01Min)
0.10
+0.075
-0.035
8
°
0
°
~
0.45~0.75
17.00
±0.20
5
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