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MDM41000WM-10

Description
Fast Page DRAM, 1MX4, 100ns, CMOS, CDSO20
Categorystorage    storage   
File Size522KB,12 Pages
ManufacturerMOSA
Websitehttp://www.mosanalog.com
Download Datasheet Parametric View All

MDM41000WM-10 Overview

Fast Page DRAM, 1MX4, 100ns, CMOS, CDSO20

MDM41000WM-10 Parametric

Parameter NameAttribute value
MakerMOSA
package instruction,
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFAST PAGE
Maximum access time100 ns
Other featuresRAS/CBR/HIDDEN REFRESH
JESD-30 codeR-CDSO-N20
memory density4194304 bi
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals20
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize1MX4
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
refresh cycle1024
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formNO LEAD
Terminal locationDUAL
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