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1N6116

Description
600W, BIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size417KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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1N6116 Overview

600W, BIDIRECTIONAL, SILICON, TVS DIODE, GLASS, CB-431, 2 PIN

1N6116 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
package instructionGLASS, CB-431, 2 PIN
Reach Compliance Code_compli
ECCN codeEAR99
Maximum breakdown voltage29.7 V
Minimum breakdown voltage24.3 V
Breakdown voltage nominal value27 V
Shell connectionISOLATED
Maximum clamping voltage39.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeE-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
polarityBIDIRECTIONAL
Maximum power dissipation3 W
Maximum repetitive peak reverse voltage20.6 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
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Index Files: 1064  1890  739  2054  2377  22  39  15  42  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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