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PN4416A

Description
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, PLASTIC, SC-43, 3 PIN, FET RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size70KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

PN4416A Overview

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, PLASTIC, SC-43, 3 PIN, FET RF Small Signal

PN4416A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage35 V
FET technologyJUNCTION
Maximum feedback capacitance (Crss)0.8 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
DISCRETE SEMICONDUCTORS
DATA SHEET
PN4416; PN4416A
N-channel field-effect transistor
Product specification
File under Discrete Semiconductors, SC07
December 1997

PN4416A Related Products

PN4416A PN4416 PN4416-T/R
Description TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, PLASTIC, SC-43, 3 PIN, FET RF Small Signal TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, PLASTIC, SC-43, 3 PIN, FET RF Small Signal TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, FET RF Small Signal
Maker NXP NXP NXP
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknow unknown unknown
Other features LOW NOISE LOW NOISE LOW NOISE
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 35 V 30 V 30 V
FET technology JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 0.8 pF 0.8 pF 0.8 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? incompatible incompatible -
Parts packaging code TO-92 TO-92 -
Contacts 3 3 -
Maximum power dissipation(Abs) 0.4 W 0.4 W -
Base Number Matches - 1 1
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