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2SD1816T

Description
TRANSISTOR,BJT,NPN,100V V(BR)CEO,4A I(C),TO-252
CategoryDiscrete semiconductor    The transistor   
File Size487KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

2SD1816T Overview

TRANSISTOR,BJT,NPN,100V V(BR)CEO,4A I(C),TO-252

2SD1816T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Reach Compliance Codeunknow
Maximum collector current (IC)4 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
surface mountYES
Nominal transition frequency (fT)180 MHz

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