Ordering number : EN538F
2SD826
SANYO Semiconductors
DATA SHEET
2SD826
Features
•
•
•
NPN Epitaxial Planar Silicon Transistor
20V / 5A, Transistor for Flash Circuit
Low saturation voltage.
High hFE.
Large current capacity.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
100ms, 1 pulse
Tc=25°C
Conditions
Ratings
60
20
6
5
8
1.0
10
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=50V, IE=0A
VEB=5V, IC=0A
VCE=2V, IC=0.5A
VCE=2V, IC=3A (Pulse)
120*
95
Conditions
Ratings
min
typ
max
1.0
1.0
560*
Unit
μA
μA
Continued on next page.
*
: The 2SD826 is classified by 0.5A hFE as follows .
Rank
E
F
hFE
120 to 200
160 to 320
G
280 to 560
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
60309EA MS IM TC-00001960 / 31005TN (PC)/21599TH (KT)/5277KI/3115KI/5244KI, TS No.538-1/6
2SD826
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Turn-ON Time
Fall Time
Storage Time
Symbol
fT
Cob
VCE(sat)
VBE(sat)
ton
tf
tstg
Conditions
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=3A, IB=60mA (Pulse)
IC=3A, IB=60mA (Pulse)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
30
40
300
Ratings
min
typ
120
45
0.5
1.5
max
Unit
MHz
pF
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7515-002
8.0
3.0
4.0
2.7
Switching Time Test Circuit
IB1
OUTPUT
IB2
VR
200
50Ω
+
1μF
VBE= --5V
+
1μF
VCC=10V
RB1
PW=10μs
D.C.=2%
tr, tf
≤
7ms
INPUT
RL
5Ω
1.6
0.8
0.8
0.6
1.5
3.0
7.0
11.0
0.5
IC=10IB1= --10IB2=2A
15.5
2.4
4.8
1.2
1
2
3
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
5
IC -- VCE
40m
A
5
IC -- VCE
60
m
A
30mA
Collector Current, IC -- A
4
A
50m
40mA
30mA
20mA
Collector Current, IC -- A
4
20mA
3
15mA
10mA
3
15mA
10mA
2
2
1
5mA
1
5mA
0
0
1
2
3
IB=0mA
4
5
ITR09923
0
0
0.2
0.4
0.6
IB=0mA
0.8
1.0
ITR09924
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.538-2/6
2SD826
5
IC -- VBE
VCE=2V
(Pulse)
1000
7
5
hFE -- IC
VCE=2V
(Pulse)
Collector Current, IC -- A
4
DC Current Gain, hFE
0
0.4
0.8
1.2
1.6
2.0
ITR09925
3
2
3
100
7
5
3
2
2
1
0
10
10
2
3
5
100
2
3
5
1000
2
3
5
Base-to-Emitter Voltage, VBE -- V
1000
7
f T -- IC
VCE=10V
(Pulse)
Collector Current, IC -- mA
2
ITR09926
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, f T -- MHz
Output Capacitance, Cob -- pF
5
3
2
100
7
5
100
7
5
3
2
10
10
3
2
2
3
5
7
100
2
3
5
Collector Current, IC -- mA
3
2
7 1000
ITR09927
10
1.0
2
3
5
7
10
2
3
5
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
10
7
5
7 100
ITR09928
ASO
ICP=8A
IC=5A
DC
100
ms
(P
IC / IB=50
(Pulse)
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
1.0
7
5
3
2
ulse
)
Collector Current, IC -- A
3
2
1.0
7
5
3
2
0.1
7
5
op
era
tio
n
0.1
7
5
3
0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- A
12
7
10
ITR09929
3
2
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
PC -- Ta
Collector-to-Emitter Voltage, VCE -- V
ITR09931
Collector Dissipation, PC -- W
10
8
Id
l
ea
6
d
at
he
iss
ip
4
o
ati
n
2
No heat sin
0
0
40
80
k
120
160
200
ITR09930
Ambient Temperature, Ta --
°C
No.538-3/6
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