MJE13005G
SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
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•
V
CEO(sus)
400 V
•
Reverse Bias SOA with Inductive Loads @ T
C
= 100_C
•
Inductive Switching Matrix 2 to 4 A, 25 and 100_C t
c
@ 3A,
100_C is 180 ns (Typ)
•
700 V Blocking Capability
•
SOA and Switching Applications Information
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Emitter Current
−
Continuous
−
Peak (Note 1)
−
Continuous
−
Peak (Note 1)
−
Continuous
−
Peak (Note 1)
Symbol
V
CEO(sus)
V
CEV
V
EBO
I
CM
I
B
I
BM
I
EM
P
D
P
D
T
J
, T
stg
I
E
I
C
Value
400
700
9
4
8
2
4
6
12
2
0.016
75
0.6
−65
to
+150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/_C
W
W/_C
_C
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
−
75 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
2
3
MARKING DIAGRAM
MJE13005G
AY WW
Total Device Dissipation @ T
A
= 25_C
Derate above 25°C
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJA
R
qJC
T
L
Max
62.5
1.67
275
Unit
_C/W
_C/W
_C
Device
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
MJE13005G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
August, 2010
−
Rev. 9
1
Publication Order Number:
MJE13005/D
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2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
SWITCHING CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 2)
SECOND BREAKDOWN
OFF CHARACTERISTICS
(Note 2)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Fall Time
Crossover Time
Voltage Storage Time
Inductive Load, Clamped
(Table 2, Figure 13)
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load
(Table 2)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
Current−Gain
−
Bandwidth Product
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f = 1 MHz)
Base−Emitter Saturation Voltage
(I
C
= 1 Adc, I
B
= 0.2 Adc)
(I
C
= 2 Adc, I
B
= 0.5 Adc)
(I
C
= 2 Adc, I
B
= 0.5 Adc, T
C
= 100_C)
Collector−Emitter Saturation Voltage
(I
C
= 1 Adc, I
B
= 0.2 Adc)
(I
C
= 2 Adc, I
B
= 0.5 Adc)
(I
C
= 4 Adc, I
B
= 1 Adc)
(I
C
= 2 Adc, I
B
= 0.5 Adc, T
C
= 100_C)
DC Current Gain
(I
C
= 1 Adc, V
CE
= 5 Vdc)
(I
C
= 2 Adc, V
CE
= 5 Vdc)
Clamped Inductive SOA with Base Reverse Biased
Second Breakdown Collector Current with base forward biased
Emitter Cutoff Current
(V
EB
= 9 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc)
(V
CEV
= Rated Value, V
BE(off)
= 1.5 Vdc, T
C
= 100_C)
Collector−Emitter Sustaining Voltage
(I
C
= 10 mA, I
B
= 0)
(I
C
= 2 A, V
clamp
= 300 Vdc,
I
B1
= 0.4 A, V
BE(off)
= 5 Vdc, T
C
= 100_C)
(V
CC
= 125 Vdc, I
C
= 2 A,
I
B1
= I
B2
= 0.4 A, t
p
= 25
ms,
Duty Cycle
v
1%)
Characteristic
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MJE13005G
2
V
CEO(sus)
Symbol
RBSOA
V
CE(sat)
V
BE(sat)
I
EBO
I
CEV
C
ob
h
FE
I
S/b
t
sv
f
T
t
d
t
s
t
r
t
f
t
fi
t
c
Min
400
10
8
−
−
−
−
−
−
−
−
4
−
−
−
−
−
−
−
−
−
−
−
−
0.025
0.16
0.32
Typ
0.9
0.4
1.7
0.3
65
−
−
−
−
−
−
−
−
−
−
−
−
−
−
See Figure 12
See Figure 11
Max
0.9
0.9
0.7
0.1
1.2
1.6
1.5
0.5
0.6
1
1
60
40
4
4
−
−
1
1
5
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
pF
ms
ms
ms
ms
ms
ms
ms
−
MJE13005G
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
70
hFE, DC CURRENT GAIN
50
25°C
30
20
- 55°C
T
J
= 150°C
2
T
J
= 25°C
1.6
I
C
= 1 A
1.2
2A
3A
4A
0.8
10
7
5
0.04 0.06
V
CE
= 2 V
V
CE
= 5 V
0.1
0.2
0.4 0.6
1
I
C
, COLLECTOR CURRENT (AMP)
2
4
0.4
0
0.03
0.05
0.1
0.2 0.3
0.5 0.7
I
B
, BASE CURRENT (AMP)
1
2
3
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
VCE(sat) , COLLECTOR-EMITTER SATURATION
VOLTAGE (VOLTS)
1.3
VBE, BASE-EMITTER VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 4
V
BE(on)
@ V
CE
= 2 V
T
J
= - 55°C
25°C
0.7
25°C
0.5
150°C
0.3
0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
0.55
I
C
/I
B
= 4
0.45
T
J
= - 55°C
25°C
0.25
1.1
0.9
0.35
0.15
150°C
0.05
0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 3. Base−Emitter Voltage
Figure 4. Collector−Emitter Saturation Voltage
10 k
V
CE
= 250 V
IC, COLLECTOR CURRENT (
μ
A)
1k
T
J
= 150°C
100
125°C
100°C
10
75°C
50°C
25°C
0.1
- 0.4
REVERSE
- 0.2
FORWARD
0
+ 0.6
+ 0.2
+ 0.4
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
2k
1k
700
500
300
200
100
70
50
30
20
0.3
0.5
1 3 5
10
30
50
V
R
, REVERSE VOLTAGE (VOLTS)
100
C
ob
300
C
ib
1
Figure 5. Collector Cutoff Region
Figure 6. Capacitance
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3
MJE13005G
I
CPK
90% V
clamp
I
C
t
sv
t
rv
t
c
V
CE
I
B
90% I
B1
10% V
clamp
10%
I
CPK
2% I
C
90% I
C
t
fi
t
ti
V
clamp
TIME
Figure 7. Inductive Switching Measurements
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to
determine the total switching time. For this reason, the
following new terms have been defined.
t
sv
= Voltage Storage Time, 90% I
B1
to 10% V
clamp
t
rv
= Voltage Rise Time, 10−90% V
clamp
t
fi
= Current Fall Time, 90−10% I
C
t
ti
= Current Tail, 10−2% I
C
t
c
= Crossover Time, 10% V
clamp
to 10% I
C
An enlarged portion of the inductive switching
waveforms is shown in Figure 7 to aid in the visual identity
of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the standard equation from AN−222:
P
SWT
= 1/2 V
CC
I
C
(t
c
)f
t, TIME (
μ
s)
0.1
0.05
0.02
0.01
0.04
t
d
@ V
BE(off)
= 5 V
t, TIME (
μ
s)
ÎÎÎÎ Î Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎÎ Î Î Î Î Î
Î
ÎÎÎÎ Î Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î
Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î
ÎÎÎÎ Î Î Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î Î Î
I
C
AMP
2
3
4
T
C
_C
t
sv
ns
t
rv
ns
t
fi
ns
t
ti
ns
t
c
ns
25
100
25
100
25
100
600
900
650
950
550
850
70
110
100
240
140
330
160
350
80
130
60
100
100
160
180
320
200
350
220
390
60
100
70
110
NOTE: All Data recorded in the inductive Switching Circuit In Table 2.
1
0.5
t
r
0.2
V
CC
= 125 V
I
C
/I
B
= 5
T
J
= 25°C
0.1
0.2
0.4
1
2
4
I
C
, COLLECTOR CURRENT (AMP)
Table 1. Typical Inductive Switching Performance
In general, t
rv
+ t
fi
]
t
c
. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25°C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a “SWITCHMODE” transistor are the inductive
switching speeds (t
c
and t
sv
) which are guaranteed at 100_C.
RESISTIVE SWITCHING PERFORMANCE
10
5
t
s
V
CC
= 125 V
I
C
/I
B
= 5
T
J
= 25°C
2
1
0.5
0.3
0.2
0.1
0.04
t
f
0.1
0.2
0.5
1
2
4
I
C
, COLLECTOR CURRENT (AMP)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
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4
MJE13005G
Table 2. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5 V
1N4933 33
MJE210
0.001
mF
TEST CIRCUITS
5V
P
W
DUTY CYCLE
≤
10%
t
r
, t
f
≤
10 ns
68
1k
2N222
2
1k
+5 V
1N493
3
270
0.02
mF
1k
2N2905
MJE200
47 100
1/2 W
- V
BE(off)
V
CC
= 125 V
R
C
= 62
W
D1 = 1N5820 or Equiv.
R
B
= 22
W
+10 V
25
ms
R
B
I
B
T.U.T.
- 4.0
V
33 1N4933
I
C
5.1 k
51
V
clamp
*SELECTED FOR
≥
1 kV
V
CE
D1
TUT
R
B
SCOPE
V
CC
+125 V
L
MR826*
R
C
RESISTIVE
SWITCHING
NOTE
PW and V
CC
Adjusted for Desired I
C
R
B
Adjusted for Desired I
B1
CIRCUIT
VALUES
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200
mH/20
A
L
coil
= 200
mH
OUTPUT WAVEFORMS
V
CC
= 20 V
V
clamp
= 300 Vdc
TEST WAVEFORMS
I
C
I
C(pk)
t
f
CLAMPED
t
f
UNCLAMPED
≈
t
2
t
t
1
t
f
t
1
ADJUSTED TO
OBTAIN I
C
t
1
≈
t
2
≈
L
coil
(I
C )
pk
V
CC
L
coil
(I
C )
pk
Test Equipment
Scope−Tektronics
475 or Equivalent
0
-8 V
t
r
, t
f
< 10 ns
Duty Cycle = 1.0%
R
B
and R
C
adjusted
for desired I
B
and I
C
V
CE
V
CE
or
V
clamp
TIME
t
2
t
V
clamp
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1
Z
qJC(t)
= r(t) R
qJC
R
qJC
= 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
2
5
t, TIME (ms)
10
20
50
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500
1k
Figure 10. Typical Thermal Response [Z
qJC
(t)]
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