T H AT
Corporation
FEATURES
·
·
·
·
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Four Matched PNP Transistors
Low noise — 0.75
nV
Hz
Quad Low-Noise
PNP Transistor Array
THAT120
APPLICATIONS
·
·
·
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Microphone Preamplifiers
Tape Head Preamplifiers
Current Sources
Current Mirrors
Log/Antilog Amplifiers
Multipliers
High Speed — 325 MHz f
t
Excellent Matching - 500
mV
(typ)
Dielectrically Isolated
-25 V V
CEO
DESCRIPTION
THAT120 is a quad, large-geometry monolithic
PNP transistor array which combines low noise, high
speed and excellent parametric matching. The large
geometry typically results in 25
W
base spreading re-
sistance, producing 0.75
nV Hz
voltage noise. This
makes these parts an excellent choice for low-noise
amplifier input stages.
Fabricated on a Complementary Bipolar Dielec-
trically Isolated process, all four transistors are elec-
trically isolated from each other by a layer of oxide.
The resulting low collector-to-substrate capacitance
produces a typical f
t
of 325 MHz, for AC perfor-
mance similar to 2N3906-class devices. The dielec-
tric isolation also minimizes crosstalk and provides
complete DC isolation.
Substrate biasing is not required for normal oper-
ation, though the substrate should be grounded to
optimize speed. The one-chip construction assures
excellent parameter matching and tracking over tem-
perature.
7
8
9
10
4
11
12
13
SUB
14
NC
1
Q2 Q1
3
2
Q4 Q3
6
5
0.060
(1.52)
Typ.
1
0.750±0.004
(19.05±0.10)
0.25±.004
(6.35±0.10)
0.050
(1.27)
Typ
0.32 Max.
(8.13)
0.125±0.004
(3.18±0.10)
0.157 0.245
(3.99) (6.2)
Max Max
1
0.018 (0.46)
Max
0.10 Typ.
(2.54)
0.075
(1.91)
0.018
(0.46)
0.010
(0.25)
0.344 (8.74)
Max
0.069
(1.75)
Max
0.010
(0.25)
Max
Figure 1. Pin
Configuration
Figure 2. Dual-In-Line Package Outline
Figure 3. Surface Mount Package Outline
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
Rev. 11/27/00
SPECIFICATIONS
1
Maximum Ratings (T
A
= 25°C)
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Collector Voltage
Emitter-Emitter Voltage
Collector Current
Emitter Current
Operating Temperature Range
Maximum Junction Temperature
Storage Temperature
Symbol
BV
CEO
BV
CBO
BV
EBO
BV
CC
BV
EE
I
C
I
E
T
A
T
JMAX
T
STORE
-45
Conditions
I
C
= 1 mAdc, I
B
= 0
I
C
= 10
mAdc,
I
E
= 0
I
E
= 10
mAdc,
I
C
= 0
Min
-25
-25
-5
±100
±100
-10
-10
0
Typ
-40
40
¾
±200
±200
-20
-20
70
150
125
Max
¾
¾
¾
¾
¾
Units
V
V
V
V
V
mA
mA
°C
°C
°C
Electrical Characteristics
2
Parameter
Current Gain
Symbol
h
fe
Conditions
V
CB
= 10 V
I
C
= 1 mA
I
C
= 10
mA
Current Gain Matching
Noise Voltage Density
Gain-Bandwidth Product
DV
BE
(V
BE1
-V
BE2
; V
BE3
-V
BE4
)
Dh
fe
e
N
f
t
V
OS
V
CB
= 10 V, I
C
= 1 mA
V
CB
= 10 V, I
C
= 1 mA, 1 kHz
I
C
= 1 mA, V
CB
= 10 V
I
C
= 1 mA
I
C
= 10
mA
DI
B
(I
B1
-I
B2
; I
B3
-I
B4
)
I
OS
I
C
= 1 mA
I
C
= 10
mA
Collector-Base Leakage Current
Bulk Resistance
Base Spreading Resistance
Collector Saturation Voltage
Output Capacitance
Collector-Collector Capacitance
Q
1
/Q
2
; Q
3
/Q
4
C
CC
V
CC
= 0 V, 100 kHz
0.6
pF
I
CBO
r
BE
r
bb
V
CE(SAT)
C
OB
V
CB
= 25 V
V
CB
= 0 V, 10mA < I
C
< 10mA
V
CB
= 10 V, I
C
= 1mA
I
C
= 1 mA, I
B
= 100
mA
V
CB
= 10 V, I
E
= 0 mA, 100 kHz
—
—
—
—
—
—
—
—
50
50
—
—
75
75
5
0.75
325
±0.5
±0.5
±700
±7
-25
2
25
-0.05
3
±3
±3
±1800
±18
—
—
—
¾
¾
—
—
%
nV / Hz
MHz
mV
mV
nA
nA
pA
W
W
V
pF
Min
Typ
Max
Units
1. All specifications subject to change without notice.
2. Unless otherwise noted, T
A
=25°C.
THAT Corporation; 45 Sumner St., Milford, Massachusetts; 01757-1656; USA
Tel: +1 (508) 478-9200; Fax: +1 (508) 478-0990; Web: www.thatcorp.com
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