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KTA1532T

Description
RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION
CategoryDiscrete semiconductor    The transistor   
File Size80KB,3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KTA1532T Overview

RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION

KTA1532T Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)210 MHz
Base Number Matches1
SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
KTA1532T
EPITAXIAL PLANAR PNP TRANSISTOR
E
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
A
F
G
K
B
DIM
A
B
2
3
C
D
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
D
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTC3532T.
C
L
G
High-Speed Switching.
1
E
F
G
H
I
J
K
L
H
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
*
T
j
T
stg
0.8
RATING
-20
-20
-5
-1.5
-3
-300
0.9
150
-55
)
150
UNIT
V
V
V
A
A
mA
W
J
1. EMITTER
2. BASE
3. COLLECTOR
Marking
Lot No.
Type Name
* Package mounted on a ceramic board (600
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Turn-On Time
Swiitching
Time
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
ob
t
on
INPUT
TEST CONDITION
V
CB
=-12V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-10 A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10 A, I
C
=0
I
C
=-750mA, I
B
=-15mA
I
C
=-750mA, I
B
=-15mA
V
CE
=-2V, I
C
=-100mA
V
CE
=-2V, I
C
=-300mA
V
CB
=-10V, f=1MHz
PW=20µs
DC
<
1%
=
I
B2
I
B1
OUTPUT
R
L
MIN.
-
-
-20
-20
-5
-
-
200
-
-
-
R
B
50Ω
V
R
220µF
470µF
Storage Time
t
stg
Fall Time
t
f
V
BE
=5V
-20I
B1
=20I
B2
=I
C
=-750mA
V
CC
=-5V
2001. 6. 26
Revision No : 0
I
TSM
SB
TYP.
-
-
-
-
-
-120
-0.85
-
210
30
50
MAX.
-0.1
-0.1
-
-
-
-180
-1.2
560
-
-
-
MHz
pF
UNIT
A
A
V
V
V
mV
V
-
90
-
nS
-
15
-
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