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HIP4081AIP

Description
80V/2.5A Peak, High Frequency Full Bridge FET Driver with Charge Pump and Independent Control Inputs; PDIP20, SOIC20; Temp Range: -40° to 85°C
CategoryAnalog mixed-signal IC    Drivers and interfaces   
File Size31KB,1 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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HIP4081AIP Overview

80V/2.5A Peak, High Frequency Full Bridge FET Driver with Charge Pump and Independent Control Inputs; PDIP20, SOIC20; Temp Range: -40° to 85°C

HIP4081AIP Parametric

Parameter NameAttribute value
Brand NameIntersil
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codePDIP, SOIC
package instructionPLASTIC, MS-001AD, DIP-20
Contacts20, 20
Reach Compliance Code_compli
ECCN codeEAR99
Factory Lead Time1 week
high side driverYES
Interface integrated circuit typeFULL BRIDGE BASED MOSFET DRIVER
JESD-30 codeR-PDIP-T20
JESD-609 codee0
length25.895 mm
Number of functions1
Number of terminals20
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Nominal output peak current2.6 A
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height5.33 mm
Maximum supply voltage15 V
Minimum supply voltage9.5 V
Nominal supply voltage12 V
surface mountNO
technologyMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Disconnect time0.07 µs
connection time0.09 µs
width7.62 mm
Intersil
Drivers, Buffers, Op-Amps and Arrays
Full Bridge MOSFET Drivers
Mfr.Õs
Type
HIP4080AIP
HIP4081AIP
HIP4082IP
Description
FET Driver with Comparator, Under Voltage, for Class D Amps,Voice Coils, and Motor Control
FET Driver with Under Voltage, High Performance for DC-DC Converters, UPS and Motor Control
FET Driver with Under Voltage Independent FET Control
Peak Output
Current
Each Drive
2.50 A
2.50 A
1.25 A
Supply Voltage
Bias/Bus
(V)
Bias: 9.5 to 16.0
Bus: 1.0 to 80.0
Bias: 9.5 to 16.0
Bus: 1.0 to 80.0
Bias: 9.5 to 16.0
Bus: 1.0 to 80.0
No Load Maint.
Supply Current
(mA)
18.5
16.5
6.5
Temperature
Range
(¡C)
Ð40 to +85
Ð40 to +85
Ð40 to +85
Package
Type
20 Lead PDI
20 Lead PDI
16 Lead PDI
High Performance Buffers
Single
Mfr.Õs
Type
PDIP
HFA1112IP
HA3-5033-5
HA3-5002-5
SOIC
Ñ
Ñ
HA9P5002-5
850 MHz Programmable Gain (+2, ±1)
250 MHz Video Buffer
110 MHz High Output Current
Description
Ð3 dB
Bandwidth @
Min. Acl
(MHz)
850
250
110
Slew
Rate
(V/µs)
2050
1100
1300
Settling
Time
(ns to %)
11-0.10
50-0.10
50-0.10
Input
Offset
Voltage
(mV)
8
5
5
Bias
Current
(µA)
25.0
20.0
2.0
Output
Current
(mA/Amp)
60
100
220
Supply
Range
(±V
DC
)
4.5 to 5.5
5.0 to 16.0
6.0 to 16.0
Supply
Current
(mA/Amp)
21.0
21.0
8.3
General Purpose Op-Amps
Single
Mfr.Õs
Type
DIP
CA3130AE
CA3130E
CA3140AE
CA3140E
HA7-2645-5
CA3160E
CA3080E
CA741E
HA3-2525-5
BiMOS Op-Amp with MOSFET Input/CMOS Output
BiMOS Op-Amp with MOSFET Input/CMOS Output
BiMOS Op-Amp with MOSFET Input/Bipolar Output
BiMOS Op-Amp with MOSFET Input/Bipolar Output
High Voltage Op-Amp
BiMOS Op-Amp with MOSFET Input/CMOS Output
Operational Transconductance Amplifier (OTA)
High Gain
Uncompensated High Slew Rate Op-Amp
Description
Minimum
Stable
Gain
1
1
1
1
1
1
1
1
3
GBWP
(MHz)
15.0
15.0
4.5
4.5
4.0
4.0
2.0
1.0
20.0
Slew
Rate
(V/µs)
30.0
30.0
9.0
9.0
5.0
10.0
75.0
0.5
120.0
Offset
Voltage
(mV)
2.0
8.0
2.0
5.0
2.0
6.0
0.4
1.0
5.0
Bias
Current
(µA)
5.000 pA
5.000 pA
10.000 pA
10.000 pA
0.012
5.000 pA
2.000
0.080
0.125
Maximum
Supply
Voltage
(±V)
8.0
8.0
18.0
18.0
50.0
8.0
18.0
22.0
20.0
Supply
Current
(mA/Amp)
2.00
2.00
4.00
4.00
3.20
2.00
1.00
1.70
4.00
No. of
Leads
8
8
8
8
8
8
8
8
8
Dual
CA3240AE
CA3240E
CA1458E
Dual BiMOS Op-Amp with MOSFET Input/Bipolar Output
Dual BiMOS Op-Amp with MOSFET Input/Bipolar Output
High Gain
1
1
1
4.5
4.5
1.0
9.0
9.0
0.5
2.0
5.0
1.0
10.000 pA
10.000 pA
0.080
18.0
18.0
22.0
4.00
4.00
1.70
8
8
8
Transistor/Diode Arrays
Transistor Arrays
Mfr.Õs
Type
CA3046
CA3081
CA3082
CA3083
CA3086
CA3146E
CA3183AE
CA3096E
CA3096AE
CA3096CE
HFA3127B
Description
3 Transistors Plus a Differential Pair, fT > 300 MHz, 2 Matched Pairs ±5 mV
7 Common Emitter General Purpose NPN High Current Transistors
7 Common Collector General Purpose NPN High Current Transistors
5 Independent NPN Transistors. Q1 and Q2 Matched; II0 (at 1 mA) 2.5 µA Max.
3 Isolated NPN Transistors Plus a Differential Pair. fT>500 MHz Typ. from DC to 120 MHz
3 Transistors Plus a Differential Pair, fT > 500 MHz Typ. Operation from DC to 120 MHz
5 High Current/High Voltage NPN Transistors. Q1 and Q2 Matched at 1 mA
5 Independent Transistors, 3 NPN and 2 PNP (NPN/PNP)
5 Independent Transistors, 3 NPN and 2 PNP (NPN/PNP)
5 Independent Transistors, 3 NPN and 2 PNP (NPN/PNP)
5 Independent 8 GHz NPN Transistors, NF = 3.5 dB at 1 GHz (NPN/PNP)
V
(BR)CEO
Min.
(V)
15
16
16
15
15
30
40
35/Ð40
35/Ð40
24/Ð24
8
V
(BR)CBO
Min.
(V)
20
20
20
20
20
40
50
45/Ð40
45/Ð40
30/Ð24
12
h
FE
Min.
40
40
40
40
40
40
40
150/20
150/20
100/15
40
I
C
Max.
(mA)
50
100
100
100
50
75
75
50/Ð10
50/Ð10
50/Ð10
40
Package
Type
14 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead PDIP
14 Lead PDIP
14 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead PDIP
16 Lead SOIC
13
Diode Array
Mfr.Õs
Type
CA3039
Description
6 Individual Ultra-Fast Low Capacitance Matched Diodes
V
(BR)R
Min.
(V)
5
I
R
Max.
(µA)
0.1
C
D
Typ.
(pF)
0.65
V
F1
-V
F2
Max.
(mV)
5 (IF=1 mA)
Package
Type
12 Lead TO-5
Same Day Shipments For Product In Stock
ALLIED
c
823

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